Results 221 to 230 of about 1,634,168 (383)
An adapted processing for solvent‐free argyrodite solid electrolyte films based on insights into degradation mechanisms of the widely used binder polytetrafluoroethylene is presented. By adapting the dry film processing, long‐term cycling in Si||NMC pouch cells is demonstrated over more than 1000 cycles with a capacity retention of more than 80%, and ...
Maria Rosner +10 more
wiley +1 more source
Adaptive Low-Resolution Combination Search for Reference-Independent Image Super-Resolution. [PDF]
Tian Y.
europepmc +1 more source
3D Digital Light Processing of Redox‐Active Polymers for Electrochemical Applications
3D printing of electrochemically switchable conducting polymers is achieved by Digital Light Processing of redox‐active carbazole‐based polymer materials. Complex 2D and 3D architectures including dot arrays and pyramids clearly show the potential for novel 3D switchable electrochemical devices for sensors, electrochromic displays as well as 3D printed
Christian Delavier +4 more
wiley +1 more source
A Six-Tap 720 × 488-Pixel Short-Pulse Indirect Time-of-Flight Image Sensor for 100 m Outdoor Measurements. [PDF]
Itaba K +4 more
europepmc +1 more source
Deformation and Degradation in 18650 Li‐Ion Cells Under Freeze‐Thaw Cycling
This study investigates the impact of freezethaw degradation of 18650 cells via combined electrochemical and x‐ray imaging studies. High‐resolution synchrotron X‐ray tomography reveals deformation of the jelly‐roll structure and delamination of electrode active materials in cells cycled at 1C and 4C. These structural changes are quantitatively assessed
Xunkai Chen +5 more
wiley +1 more source
Advancements in Active-Pixel-Type CMOS Image Sensor Design Techniques and Architectures for Wide Dynamic Range. [PDF]
Sim S, Jun J.
europepmc +1 more source
A dual‐binder dry‐processed electrode (DB‐DPE) combining PTFE and PVDF with a nanostructured Al current collector (NSA) forms a mechanically interlocked interface that significantly improves adhesion and reduces interfacial resistance. With an active material content as high as 96 wt.%, the NSA‐based DB‐DPE enables high‐mass‐loading operation (12.5 mAh
Seok Yun Kim +4 more
wiley +1 more source
A 5000 Fps, 4 Megapixel, Radiation-Tolerant, Wafer-Scale CMOS Image Sensor for the Direct Detection of Electrons and Photons. [PDF]
Scott A +9 more
europepmc +1 more source
Sub-pixel mapping method based on ANN and super-resolution reconstructed model [PDF]
Ke Wu +4 more
openalex +1 more source

