Results 151 to 160 of about 373 (216)

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun   +15 more
wiley   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

open access: yesAdvanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu   +4 more
wiley   +1 more source

Cassini spacecraft reveals global energy imbalance of saturn. [PDF]

open access: yesNat Commun
Wang X   +18 more
europepmc   +1 more source

Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Sub‐millimeter‐thick phase‐engineered 1T/2H‐MoS2 structures enable electrically tunable electromagnetic interference shielding through active modulation of microwave absorption and reflection. The coexistence of metallic and semiconducting phases, combined with a PVA/KOH gel electrolyte, provides dynamic control over charge transport and interfacial ...
Mustafa Akyol   +3 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

Selecting optimal celestial object for space observation in the realm of complex spherical fuzzy systems. [PDF]

open access: yesHeliyon
Razzaque A   +5 more
europepmc   +1 more source

One‐Step Synthesis of Size‐Controlled Copper Oxide Nanoparticles on Laser‐Induced Graphene Sensor for L‐Cysteine Detection

open access: yesAdvanced Electronic Materials, EarlyView.
Oxygen plasma treatment enhances polyimide hydrophilicity and promotes uniform anchoring of copper ion precursors. A one‐step laser process then generates CuO‐decorated nanoparticles on laser‐induced graphene (LIG) electrodes, enabling controlled nanoparticle growth via precursor concentration tuning.
Gustavo Miguel Sousa   +6 more
wiley   +1 more source

Reactivity of the Ethenium Cation (C2H5+) with Ethyne (C2H2): A Combined Experimental and Theoretical Study. [PDF]

open access: yesMolecules
Richardson V   +7 more
europepmc   +1 more source

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