Results 141 to 150 of about 347,037 (199)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

The management of pregnancy for a woman with bilateral Klippel-Trenaunay syndrome: A case report. [PDF]

open access: yesCase Rep Womens Health
Meenakshi Menon R   +13 more
europepmc   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

open access: yesAdvanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee   +5 more
wiley   +1 more source

From data to treatment plan: An AI-driven path for automated breast radiotherapy planning. [PDF]

open access: yesJ Appl Clin Med Phys
Gallego P   +17 more
europepmc   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

open access: yesAdvanced Functional Materials, EarlyView.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng   +5 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

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