Results 31 to 40 of about 131,786 (274)

Influence of heavier impurity deposition on surface morphology development and sputtering behavior explored in multiple linear plasma devices

open access: yesNuclear Materials and Energy, 2019
Surface morphology development and sputtering behavior of Cr, as a test material, have been explored under He plasma exposure at a low incident ion energy of ∼80 eV in multiple linear plasma devices: PISCES-A, PSI-2, and NAGDIS-II. From comparison of the
D. Nishijima   +14 more
doaj   +1 more source

Anomalous diffusion, clustering, and pinch of impurities in plasma edge turbulence

open access: yes, 2005
The turbulent transport of impurity particles in plasma edge turbulence is investigated. The impurities are modeled as a passive fluid advected by the electric and polarization drifts, while the ambient plasma turbulence is modeled using the two ...
Boyd J. P.   +9 more
core   +1 more source

Low Mach-number collisionless electrostatic shocks and associated ion acceleration [PDF]

open access: yes, 2017
The existence and properties of low Mach-number ($M \gtrsim 1$) electrostatic collisionless shocks are investigated with a semi-analytical solution for the shock structure.
Pusztai, Istvan   +6 more
core   +2 more sources

Investigation of Laser Ablation and Brush Pre‐Treatments for AlCu Cold Roll Bonding in Oxygen‐Free Conditions

open access: yesAdvanced Engineering Materials, EarlyView.
It is shown that laser ablation pretreatment under oxygen‐free conditions enables copper–aluminium bonding at significantly lower deformation degrees and improved properties compared to mechanical brushing. Laser ablation further increases interface contact area and induces favourable residual stress states and microstructural compatibility ...
Khemais Barienti   +11 more
wiley   +1 more source

Design and test of a control system for the EAST laser blow-off impurity injection system

open access: yesHe jishu, 2023
BackgroundStudying the transport behavior of impurities in plasma and developing effective impurity control methods are important for achieving high-performance plasma discharge and ensuring the safe operation of the device.PurposeThis study aims to ...
FAN Yu   +12 more
doaj   +1 more source

Impurity intrusion in radio-frequency micro-plasma jets operated in ambient air

open access: yes, 2011
Space and time resolved concentrations of helium metastable atoms in an atmospheric pressure radio-frequency micro-plasma jet were measured using tunable diode laser absorption spectroscopy.
A Kanitz   +9 more
core   +1 more source

Impurity flows and plateau-regime poloidal density variation in a tokamak pedestal [PDF]

open access: yes, 2011
In the pedestal of a tokamak, the sharp radial gradients of density and temperature can give rise to poloidal variation in the density of impurities. At the same time, the flow of the impurity species is modified relative to the conventional neoclassical
D. Guszejnov   +3 more
core   +2 more sources

Influence of an Argon/Silane Atmosphere on the Temperature of a Thermal Plasma

open access: yesAdvanced Engineering Materials, EarlyView.
The influence of a silane‐doped argon atmosphere on the chemical composition and temperature of a thermal nontransferring argon plasma is investigated using optical emission spectroscopy. As a result of the high amount of free electrons resulting from the stepwise ionization and dissociation of the silane molecule, even a silane addition of 0.01 vol ...
Lena Kreie   +4 more
wiley   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

open access: yesAdvanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source

Method for Removing Impurities by Treating Silicon Tetrachloride with Hydrogen Plasma

open access: yesInorganics
The transformation of organochlorine and organic impurities such as CCl4, C2H2Cl2, C2HCl3, C2Cl4, C2H2Cl4, CH4, C3H8, C4H10, and C6H6 in the content range of 10−2–10−6 wt.%, as well as BCl3 impurities at the level of 3 × 10−2 wt.%, was considered.
Roman Kornev   +5 more
doaj   +1 more source

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