Results 201 to 210 of about 180,893 (337)

From Thin Films to Nanodots: Bottom‐Up Integration of Fe3O4 on Nb:STO for Functional Oxide Nanostructures

open access: yesAdvanced Materials, EarlyView.
Scalable bottom‐up fabrication of Fe3O4 nanodots on Nb:SrTiO3 using anodic alumina templates enables long‐range ordered arrays with diameters down to 30 nm. STEM highlights the epitaxial growth of Fe3O4 films on Nb:SrTiO3. Complementary polarized neutron reflectometry (PNR) and X‐ray magnetic circular dichroism (XMCD) measurements on continuous films ...
Yifan Xu   +14 more
wiley   +1 more source

Machinability and tribological optimization of origami-inspired Almond Shell-PMMA via RSM, ML, and TOPSIS. [PDF]

open access: yesPLoS One
Bhattacharjee B   +7 more
europepmc   +1 more source

The Use of Polymethylmetacrylate (PMMA) in Bioplasty

open access: bronze
Eduardo Luiz da Costa   +4 more
openalex   +1 more source

Tuning Pore Size in Porous Graphene Membrane for O2/N2 Separation

open access: yesAdvanced Materials, EarlyView.
Single‐layer graphene membranes featuring N‐functionalized, 0D pores offer a promising platform for O2/N2 separation. The heterogeneity of functional groups at the pore edge is dynamically tunable, enabling precise tuning of the pore limiting diameter and gas transport.
Kuang‐Jung Hsu   +5 more
wiley   +1 more source

Scalable and Multifunctional PAN‐MXene Composite Fibers for Thermal Management, Photothermal Conversion, Energy Harvesting, and Sensing for Wearable Applications

open access: yesAdvanced Materials, EarlyView.
Electrospun PAN‐MXene nanofibers and yarns integrate enhanced thermal conductivity, photothermal conversion, and triboelectric energy harvesting within a flexible architecture. Interconnected MXene networks promote efficient phonon transport, while their surface chemistry strengthens tribo‐negative behavior, enabling a high power density of 432.7 mW m ...
Ahmadreza Moradi   +2 more
wiley   +1 more source

Dispersion Parameters of Copper Sulphate Doped PMMA

open access: gold
Sami Salman Chiad   +2 more
openalex   +2 more sources

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

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