Results 161 to 170 of about 19,175 (257)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka   +5 more
wiley   +1 more source

Ultrastable Self‐Cross‐linkable Electro‐Optic Materials Based on a Bisanthracene Scaffold

open access: yesAdvanced Electronic Materials, EarlyView.
A novel bisanthracene‐based self‐cross‐linkable electro‐optic chromophore (TD2) is developed. TD2 exhibits a high r33 of 141 pm/V and a cross‐linked Tg up to 195 °C, retaining 99.75% of its initial EO response after 500 h at 85 °C, showing record‐high thermal stability for single‐molecule self‐cross‐linking EO materials.
Xingtao Wang   +6 more
wiley   +1 more source

Mapping of cotton bolls and branches with high-granularity through point cloud segmentation. [PDF]

open access: yesPlant Methods
Jiang L   +5 more
europepmc   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

A Global-Local Attention Model for 3D Point Cloud Segmentation in Intraoral Scanning: A Novel Approach. [PDF]

open access: yesBioengineering (Basel)
Chen H   +8 more
europepmc   +1 more source

Stabilization of Ultrafast Domain Wall Motion by Edge‐Anisotropy Engineering in Ferrimagnetic Nanowires

open access: yesAdvanced Electronic Materials, EarlyView.
Localized laser annealing transforms distorted, edge‐pinned domain‐wall motion in ferrimagnetic Pt/GdFe nanowires into straight, stable, and ultrafast propagation. Experiments and micromagnetic simulations reveal an optimum anisotropy‐engineering window in which moderate edge softening suppresses pinning, whereas excessive anisotropy reduction or ...
Mojtaba Mohammadi   +5 more
wiley   +1 more source

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