Polarization Switching Kinetics in Thin Ferroelectric HZO Films [PDF]
Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability,
Ekaterina Kondratyuk, Anastasia Chouprik
doaj +4 more sources
Sub-nanosecond polarization switching with anomalous kinetics in vdW ferroelectric WTe2 [PDF]
Recently discovered “sliding ferroelectrics” exhibit distinct polarization origin and switching mechanism compared to conventional ferroelectric materials. However, a clear understanding of the polarization switching kinetics remains lacking.
Yinxin Bai +16 more
doaj +2 more sources
Imaging Electric Polarization Switching in Multilayer Graphene [PDF]
Fundamentally distinct from the conventional ferroelectrics, the most discriminative hallmark of the emerging 2D sliding ferroelectricity is the polarization switching via the domain wall (DW) sliding.
Zhou Zhou +10 more
doaj +2 more sources
Configurable kinetics of polarization switching via ion migration in ferroionic CuInP2S6 [PDF]
Ferroelectric materials are promising for developing non-volatile memory, neuromorphic computing, and photovoltaic technologies. Taking advantage of variable switching kinetics provides an important strategy for designing multifunctional ferroelectric ...
Lei Liang +11 more
doaj +2 more sources
Ultrafast polarization switching in ferroelectrics [PDF]
A method of ultrafast switching of ferroelectric polarization is suggested. The method is based on the interaction of a ferroelectric sample with the feedback field of a resonator in which the sample is inserted.
V. I. Yukalov, E. P. Yukalova
doaj +3 more sources
Proposal of kHz-level polarization switching of undulator radiation with magnetic field modulation at Hefei Advanced Light Facility [PDF]
A magnetic field modulation-based scheme for fast polarization switching of undulator radiation has been proposed for Hefei Advanced Light Facility (HALF), a fourth generation soft X-ray light source based on a diffraction-limited storage ring.
Nanrui Yang +3 more
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Raman polarization switching in CrSBr
Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectronic
Priyanka Mondal +12 more
doaj +3 more sources
Proton tautomerism for strong polarization switching. [PDF]
AbstractFerroelectrics based on proton tautomerism are promising in low-field and above-room-temperature operations. Here seven organic ferroelectric crystals are examined to search for efficient switching of strong spontaneous polarization on proton tautomerism.
Horiuchi S +3 more
europepmc +5 more sources
Polarization-controlled volatile ferroelectric and capacitive switching in Sn2P2S6
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history ...
Sabine M Neumayer +6 more
doaj +1 more source
Vortex Polarity Switching by a Spin-Polarized Current [PDF]
The spin-transfer effect is investigated for the vortex state of a magnetic nanodot. A spin current is shown to act similarly to an effective magnetic field perpendicular to the nanodot. Then a vortex with magnetization (polarity) parallel to the current polarization is energetically favorable.
Caputo, J.G. +3 more
openaire +4 more sources

