Results 11 to 20 of about 721 (167)

Microstructure evolution of polycrystalline silicon by molecular dynamics simulation

AIP Advances, 2017
Polycrystalline silicon is the dominant material in solar cells and plays an important role in photovoltaic industry. It is important for not only the conventional production of silicon ingots but also the direct growth of silicon wafers to control ...
Xiao Chen, Jianning Ding, Cunhua Jiang, Zunfeng Liu, Ningyi Yuan   +4 more
doaj   +1 more source

Optimization of Adaptive Edge Algorithm Based on Spatial Gradient Information [PDF]

Jisuanji gongcheng, 2016
In order to solve the edge breakpoint and pseudo edge problem occurred in the detection of polycrystalline silicon crystal domain based on threshold segmentation,an adaptive edge extraction optimization algorithm based on spatial gradient information is ...
XU Meimei,XIAO Qionglin,WANG Lu,XU Wenying,MA Yue,YAN Zhijun
doaj   +1 more source

Obtaining simultaneously high crystallinity and sub-bandgap absorption in femtosecond laser hyperdoped black silicon using ion beam etching

AIP Advances, 2021
Femtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon
Simon Paulus, Patrick Mc Kearney, Friedemann Völklein, Stefan Kontermann   +3 more
doaj   +1 more source

An Improved Matlab-Simulink Model of PV Module considering Ambient Conditions

International Journal of Photoenergy, 2014
A photovoltaic (PV) model is proposed on Matlab/Simulink environment considering the real atmospheric conditions and this PV model is tested with different PV panels technologies (monocrystalline silicon, polycrystalline silicon, and thin film).
R. Ayaz, I. Nakir, M. Tanrioven
doaj   +1 more source

Polycrystalline silicon PhC cavities for CMOS on-chip integration

Scientific Reports, 2022
In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a
S. Iadanza, G. C. R. Devarapu, A. Blake, P. Acosta Alba, J.-M. Pedini, L. O’Faolain   +5 more
doaj   +1 more source

Flexible low-temperature polycrystalline silicon thin-film transistors

Materials Today Advances, 2020
In today's society, displays are indispensable for digital interaction and personal contact. Therefore, the development of displays is an urgent need for the next generation.
T.-C. Chang, Y.-C. Tsao, P.-H. Chen, M.-C. Tai, S.-P. Huang, W.-C. Su, G.-F. Chen   +6 more
doaj   +1 more source

Microstructure evolution from silicon core to surface in electronic-grade polycrystalline silicon

Journal of Advanced Dielectrics
Large-size electronic-grade polycrystalline silicon is an important material in the semiconductor industry with broad application prospects. However, electronic-grade polycrystalline silicon has extremely high requirements for production technology and ...
Jinyue Peng, Yuxuan Yang, Yang Zhang, Xinlu Xue, Bochen Lu, Rong Qin, Haijun Wu   +6 more
doaj   +1 more source

Microstructure of electronic-grade polycrystalline silicon core-matrix interface

Journal of Advanced Dielectrics
This paper focuses on the problems encountered in the production process of electronic-grade polycrystalline silicon. It points out that the characterization of electronic-grade polycrystalline silicon is mainly concentrated at the macroscopic scale ...
Bochen Lu, Yuxuan Yang, Yang Zhang, Rong Qin, Xinlu Xue, Jinyue Peng, Haijun Wu   +6 more
doaj   +1 more source

Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering

Sensors, 2014
In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process.
Li-Chen Yen, Ming-Tsyr Tang, Fang-Yu Chang, Tung-Ming Pan, Tien-Sheng Chao, Chiang-Hsuan Lee   +5 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source