Results 291 to 300 of about 2,753,227 (369)

Breaking Barriers in Polymer Additive Manufacturing

open access: green, 2015
Lonnie Love   +7 more
openalex   +1 more source

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

open access: yesAdvanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami   +7 more
wiley   +1 more source

Instrumentation for In situ/Operando X-ray Scattering Studies of Polymer Additive Manufacturing Processes

open access: green, 2019
Lutz Wiegart   +14 more
openalex   +1 more source

Al₂O₃‐Functionalized Carbon Nanomembranes with Enhanced Water Permeance and Selectivity for Efficient Air Dehumidification

open access: yesAdvanced Functional Materials, EarlyView.
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger   +10 more
wiley   +1 more source

Data-Driven Tailoring Optimization of Thermoset Polymers Using Ultrasonics and Machine Learning. [PDF]

open access: yesPolymers (Basel)
Seisdedos G   +6 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

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