Results 161 to 170 of about 83,573 (332)
Advanced Electronic Materials, EarlyView.This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka +6 more
wiley +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Advanced Electronic Materials, EarlyView.Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Introducción a los Invariantes de Nudos
TecnoLógicas, 2010 Since its inception, due to the work of Johann Carl Friedrich Gauss and Lord Kelvin, knot theory has had a major problem, that is given is to determine when two diagrams of knots, these correspond to the same knot, Peter Tait tried to resolve the ...
Pablo F. Ardila
doaj
On a Poincaré polynomial from Khovanov homology and Vassiliev invariants [PDF]
, 2019 Noboru Ιτο, Masaya Kameyama
openalex +1 more source
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
The nilpotent variety and invariant polynomial functions in the Hamiltonian algebra [PDF]
, 2014 Junyan Wei
openalex +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source