Results 71 to 80 of about 172,894 (301)
Method of fabricating porous silicon carbide (SiC) [PDF]
, 1995 Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime.
Kurtz, Anthony D., Shor, Joseph S.
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Advanced Engineering Materials, EarlyView.This study investigates thermo‐chemical processes during high‐temperature testing of two commercial MgO‐C brick grades, one containing 47.5 wt.% MgO‐C recyclate. Using ETV, DTA/TG‐MS, XRD, and SEM/EDS/EBSD, mechanisms such as carbothermal reduction of magnesia, impurity incorporation into the secondary MgO surface layer, and calcium‐rich phase ...
Alexander Schramm +6 more
wiley +1 more source
FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined.
E. B. Chubenko +4 more
doaj
Laterally stacked Schottky diodes for infrared sensor applications [PDF]
, 1991 Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating.
Lin, True-Lon
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Porous silicon formation and electropolishing
, 2001 Electrochemical etching of silicon in hydrofluoride containing electrolytes leads to pore formation for low and to electropolishing for high applied current. The transition between pore formation and polishing is accompanied by a change of the valence of
A. Ulhir +20 more
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Controlling the Er content of porous silicon using the doping current intensity [PDF]
, 2014 The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy ...
Falqui, Andrea +7 more
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Advanced Engineering Materials, EarlyView.The formation of nonmetallic inclusions (NMIs) was investigated in this study, carrying out immersion tests for 30 min at a temperature of 1600°C with liquid high‐silicon electrical steel (Si ≈ 3 mass‐%) and different MgO–C refractories. Conventional MgO–C refractories were considered, as well as MgO–C refractories containing MgO–C recyclate and ...
Lukas Neubert +6 more
wiley +1 more source
Preparation of Porous Silicon by Electrochemical Etching in the Fabrication of a Solar Cell [PDF]
, 2003 Porous silicon samples have been prepared using electrochemical etching technique. In this project, a 3 cm x 5cm single crystal p-type silicon wafer , resistivity 19.64 Ωcm with thickness of 200µm was used to prepare porous silicon.
Magentharau, Adin Naraina
core
Huge (but finite) time scales in slow relaxations: beyond simple aging
, 2011 Experiments performed in the last years demonstrated slow relaxations and aging in the conductance of a large variety of materials. Here, we present experimental and theoretical results for conductance relaxation and aging for the case-study example of ...
Ariel Amir +5 more
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Advanced Engineering Materials, EarlyView.Collagen hydrolysate is evaluated as a sustainable binder for MgO‐C refractories. Its thermally induced cross‐linking and gas release lead to expansion and cracking in large bricks, but tailored batches with lignin, recyclates, or fine graphite improve the gas release while thermal treatment and stability.
Till M. J. Stadtmüller +8 more
wiley +1 more source