Results 151 to 160 of about 547,915 (267)

Interface‐Defect Synergy Engineering of Amorphous Ga2O3 for Voltage‐Tunable Dual‐Mode Optoelectronic Devices: Self‐Powered Imaging and Neuromorphic Vision

Advanced Functional Materials, EarlyView.
An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...
Wanjun Li, Aijiang Yan, Lijuan Ye, Xuanyu Shan, Chunyan Liu, Hong Zhang, Shuren Zhou, Honglin Li, Di Pang, Yan Tang, Guoping Qin, Zhongqiang Wang, Peng Yu, Zhenxiang Cheng   +13 more
wiley   +1 more source

Retention and Distribution of Dopamine-Dependent Reward Memory in Regenerating Planaria. [PDF]

Biomolecules
Samuel K, Hakes AK, Suviseshamuthu ES, Fichera ME.   +3 more
europepmc   +1 more source

Catalytically Enhanced Near Room‐Temperature Hydrogen Sensing Using Pd‐ZnO Colloidal Crystals

Advanced Functional Materials, EarlyView.
Pd‐decorated ZnO colloidal crystal monolayers demonstrate excellent performance across a wide hydrogen concentration range at 33°C, with high selectivity and reproducible device fabrication. The sensors show strong responses even at low‐ppm H2 concentrations and an ultra‐low detection limit of 82 ppb, indicating their suitability for diverse hydrogen ...
Hamidah Alluhaybi, Samuel J. Ippolito, Chung Kim Nguyen, Durairaj Mahendiran, Michelle J. S. Spencer, Edwin L. H. Mayes, Billy James Murdoch, Jason Choi, Shamali De Silva, James Tardio, Adrian Trinchi, Ahmad E. Kandjani, Mohammad Al Kobaisi, Ylias Sabri   +13 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

A neuropsychological perspective on sensory hypersensitivity after acquired brain injury. [PDF]

Brain Commun
Heijman JO, Marzolla MC, Thielen H, Spielmann K, Königs M, Gillebert CR, van Heugten CM, van der Stoep N, Huenges Wajer IMC.   +8 more
europepmc   +1 more source

Crimes Committed in Times of War, Recalled in Post-Memory

, 2018
Although war is a propitious context for different kinds of crime, criminology has underestimated its analysis. However, in recent years there has been a reversal of this trend, with a growing interest of criminologists in the phenomenon of war.
openaire   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Toward Integrating Intranasal Esketamine with Traumatic-Memory Psychotherapy in Treatment-Resistant Depression: A Narrative Review and Feasibility-Oriented Protocol Proposal. [PDF]

Behav Sci (Basel)
Raffone F, Cattaneo CI, Pessina E, Martini A, Martiadis V.   +4 more
europepmc   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source