Results 81 to 90 of about 360,597 (195)

The key physical parameters governing frictional dissipation in a precipitating atmosphere

, 2012
Precipitation generates small-scale turbulent air flows the energy of which ultimately dissipates to heat. The power of this process has previously been estimated to be around 2-4 W m-2 in the tropics: a value comparable in magnitude to the dynamic power
A. D. Nobre, A. M. Makarieva, A. V. Nefiodov, B.-L. Li, Bennartz, Bowman, Cotton, D. Sheil, Das, Durden, Earle, Emanuel, Fankhauser, Ferrier, Folkins, Foote, Gorshkov, Gorshkov, Jiang, L'vovitch, Leary, Legates, Liu, Lord, Lorenz, Makarieva, Makarieva, Makarieva, Makarieva, Makarieva, Marvel, Miles, Newton, O'Dell, Oort, Ooyama, P. Bunyard, Pauluis, Pauluis, Pauluis, Peixoto, Rennó, Rex, Schiermeier, Schneider, Seifert, Sheets, Tokay, V. G. Gorshkov, Wood   +49 more
core   +1 more source

Non-Restoring Array Divider Using Optimized CAS Cells Based on Quantum-Dot Cellular Automata with Minimized Latency and Power Dissipation for Quantum Computing. [PDF]

Nanomaterials (Basel), 2022
Kim HI, Jeon JC.
europepmc   +1 more source

Exploring performance and power properties of modern multicore chips via simple machine models

, 2014
Modern multicore chips show complex behavior with respect to performance and power. Starting with the Intel Sandy Bridge processor, it has become possible to directly measure the power dissipation of a CPU chip and correlate this data with the ...
Chen, Hager, Hoisie, Hähnel, Kerbyson, Li, Nudd, Qian, Rotem, Succi, Suleman, Treibig, Treibig, Treibig, Wellein, Wolf-Gladrow, Zeiser, Ziegler   +17 more
core   +1 more source

Power Dissipation in Spintronic Devices: A General Perspective [PDF]

Journal of Nanoscience and Nanotechnology, 2007
Champions of "spintronics" often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional 'charge based' electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim.
openaire   +3 more sources

The Development of Low-Current Surface Arcs Under Clean and Salt-Fog Conditions in Electricity Distribution Networks

IEEE Access, 2018
Electricity distribution networks are built to deliver increasing amount of electricity from distributed energy resources (DERs) such as offshore and onshore wind and solar farms. Aging of network assets through low-current surface discharges is becoming
Xin Zhang, Jiebei Zhu, Siqi Bu, Qi Li, Vladimir J. Terzija, Simon M. Rowland   +5 more
doaj   +1 more source

Chip Power Scaling in Recent CMOS Technology Nodes

IEEE Access, 2019
This paper tracks the scaling of total chip power at constant frequency (i.e., energy-per-operation) through the last few CMOS nodes. The focus is on high-performance microprocessors.
Ghavam G. Shahidi
doaj   +1 more source

The thermal electrical overheating. A physicochemical perspective of the electrical warming

Revista Facultad de Ingeniería Universidad de Antioquia, 2012
The present article exposes the actual behaviors observed after  five years of investigation, experimentation and modeling, with electrical conductors that had a fault by high thermal conduction, with the principal purpose of producing a contribution ...
Dorimdo Elam Cárdenas Estrada, Santos Gracia Villar, Federico Fernández Diez, Luis Alonso Dzul   +3 more
doaj   +1 more source

Multi-Layer QCA Reversible Full Adder-Subtractor Using Reversible Gates for Reliable Information Transfer and Minimal Power Dissipation on Universal Quantum Computer

Applied Sciences
The effects of quantum mechanics dominate nanoscale devices, where Moore’s law no longer holds true. Additionally, with the recent rapid development of quantum computers, the development of reversible gates to overcome the problems of energy and ...
Jun-Cheol Jeon
doaj   +1 more source

Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation. [PDF]

Materials (Basel), 2020
Martinez A, Barker JR.
europepmc   +1 more source

Theoretical analysis and design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltage [PDF]

Maejo International Journal of Science and Technology, 2008
This paper analyses the device structure of a 6H-SiC vertical double-implanted MOSFET (DIMOSFET) in order to provide a high breakdown voltage of about 10 kV and a low power dissipation for a rise in device temperature of 600 oC.
Munish Vashishath
doaj