Results 111 to 120 of about 236,223 (301)
Advanced combined iodine dispenser and detector [PDF]
A total weight of 1.23 kg (2.7 lb), a total volume of 1213 cu m (74 cu in), and an average power consumption of 5.5W was achieved in the advanced combined iodine dispenser/detector by integrating the detector with the iodine source, arranging all ...
Jensen, F. C. +3 more
core +1 more source
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Ultra Low-Power Analog Median Filters [PDF]
The design and implementation of three analog median filter topologies, whose transistors operate in the deep weak-inversion region, is described. The first topology is a differential pairs array, in which drain currents are driven into two nodes in a ...
Diaz-Sanchez, A. +5 more
core +1 more source
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen +12 more
wiley +1 more source
Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch
Silicon carbide (SiC) MOSFETs are garnering widespread attention due to their superior performance in high‐temperature, high‐frequency, and high‐voltage applications, emerging as the preferred power semiconductor devices in converters for photovoltaic ...
Changzhou Yu +6 more
doaj +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Context: Energy harvesting has positioned itself an emerging area of research due to recent developments in low-power electronics, the Internet of Things, and artificial intelligence.
JOYDEEP BANERJEE
doaj +1 more source
Design of Low-Power CMOS OTA Using Bulk-Drive Technique [PDF]
This paper presents the design of low power CMOS- OTA (operational transconductance amplifier) using bulk drive (BD) technique with broad band. This technique is used for design of low power circuits with broad band for high frequency users, for example ...
Maryam Ghadiri Modarres
doaj
A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design [PDF]
Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ...
Bay Abo Dabbous, S. +2 more
core +1 more source
An innovative medium entropy alloy (MEA) composite material was fabricated via micro laser powder bed fusion (μ‐LPBF) with appropriate nano‐ceramic particles doping and exhibited markedly improved overall performance, including synergistically enhanced strength and ductility, increased hardness and compressive strength, improved wear resistance and ...
Zhonglin Shen, Mingwang Fu
wiley +1 more source

