Results 201 to 210 of about 4,888,001 (305)

Electrochromic Adaptive Solar Heater and Sub‐Ambient Passive Daytime Radiative Cooler

open access: yesAdvanced Materials, EarlyView.
An electrochromic Cu–Bi nanocluster device dynamically switches between solar heating and daytime sub‐ambient radiative cooling without mechanical motion. Defect‐activated graphene, minimized electrolyte loss, and pulse‐assisted reversible electrodeposition enable opposite solar and mid‐infrared modulation in one opaque platform, establishing a design ...
Chenxi Sui   +11 more
wiley   +1 more source

Establishing Atomic Coherence in Twisted Oxide Membranes Containing Volatile Elements

open access: yesAdvanced Materials, EarlyView.
Twisted oxide membranes containing volatile elements often suffer from amorphous interfacial dead layers that suppress coupling. An oxygen‐annealing strategy establishes atomically coherent and chemically bonded interfaces in twisted NaNbO3 membranes, enabling coherent oxide moiré architectures in volatile‐element‐containing systems.
Young‐Hoon Kim   +6 more
wiley   +1 more source

Resolving Nanoscale Heterogeneities in Lead Halide Perovskites Through Low‐Dose Concurrent 4D‐STEM‐EDX Mapping

open access: yesAdvanced Materials, EarlyView.
Mixed‐cation lead mixed‐halide perovskites suffer from structural instabilities linked to nanoscale heterogeneity. To probe this non‐destructively, a low‐dose, concurrent 4D‐STEM and EDX methodology has been developed. Examining a (FA0.83Cs0.17)Pb(I0.8Br0.2)3 film revealed a complex mosaic of coexisting crystal structures. Crucially, local deficiencies
Jinseok Ryu   +6 more
wiley   +1 more source

Increasing flexibility in vulnerable power grids using electrochemical storage. [PDF]

open access: yesHeliyon
Gómez-Ramírez GA   +3 more
europepmc   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

open access: yesAdvanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee   +15 more
wiley   +1 more source

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