Results 201 to 210 of about 159,794 (269)

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

One Example of Reconstruction of Ordinal Power Station to Automatic Station.-Funatsu Water Power Station

The Journal of the Institute of Electrical Engineers of Japan, 1926
openaire   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

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The physics of power stations. II. Nuclear power stations

Physics Education, 1975
For pt.I see ibid., vol.10, p.448 (1975). Data are presented relating to the design, operation and waste production of the steam generating heavy water reactor (SGHWR), that was collected for use in the power station game, a physics based simulation exercise recently developed for use in schools.
H I Ellington, N H Langton
openaire   +1 more source

Modelling a Photovoltaic Power Station

2020
The continuous development of different domains of technique leads us to diversity; likewise, there are appearing new types of energy sources in the field of energy engineering, as well as new extraction procedures, conversions or energy caption, but also new components with better performances being used in many domain of industry.
Eva Barla, Simona Dzitac, Carja Vasile
openaire   +1 more source