Results 251 to 260 of about 7,018,705 (370)

Modulating Dynamic Photoresponse Behavior of Organic Phototransistors Through Morphology Control

open access: yesAdvanced Electronic Materials, EarlyView.
An effective and facile strategy is investigated to regulate the photoresponse behavior from photomemory to photoswitching through controlling the crystalline and transporting properties of photosensitive layer. Highly ordered, high‐mobility films typically shows photomemory behavior whereas films with poor crystallinity and low charge mobility tend to
Weijie Gong   +12 more
wiley   +1 more source

Toward Enhanced Biomimetic Artificial Visual Systems Based on Organic Heterojunction Optoelectronic Synaptic Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic synaptic transistor based on core‐multi‐shell quantum dots and Pentacene achieves a recognition capability under different light intensities that closely resembles that of the human eye. Under optimal light intensity, the recognition accuracy for the MNIST dataset can reach 91.52%.
Haonan Wang   +8 more
wiley   +1 more source

Prevalence of Periodontitis among Thermal Power Station Workers in South India.

open access: yesJ Pharm Bioallied Sci
Pillai DDM   +6 more
europepmc   +1 more source

Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity

open access: yesAdvanced Electronic Materials, EarlyView.
The metal‐semiconductor phase transition (1T to 2H) in VSe2 is achieved by a thermal annealing process. The 2H‐VSe2 photodetector exhibits low dark current, broadband spectral range, and high sensitivity with responsivity (R) and detectivity (D*) up to 75.26 A W−1 and 1.45 × 1010 Jones, respectively, at optical communication band with a wavelength of ...
Yujue Yang   +8 more
wiley   +1 more source

Prevalence of Dental Caries among Thermal Power Station Workers in South India.

open access: yesJ Pharm Bioallied Sci
Pillai DDM   +6 more
europepmc   +1 more source

2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1

open access: yesAdvanced Electronic Materials, EarlyView.
The room temperature ferroelectricity of two‐dimensional (2D) AgInP2Se6 is achieved, which is further integrated with MoS2 channel into ultra‐steep negative capacitance transistors (NC‐FETs) for low‐power electronic applications. Due to the negative capacitance effect of AgInP2Se6 during the polarization reversal process, the transistor breaks the ...
Yujue Yang   +8 more
wiley   +1 more source

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