Results 281 to 290 of about 7,018,705 (370)

Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
This study investigates the synaptic plasticity of WO3‐based IGTs for neuromorphic computing. It examines the impact of ionic gating media, i.e., [EMIM][TFSI] and ‎LiTFSI in [EMIM][TFSI], on the nanoscale structure of electrical double layers and IGT response times and plasticity.
Ramin Karimi Azari   +8 more
wiley   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
HfOx‐based resistive random‐access‐memory (TiN/Ti/HfOx/RuOx/TiN) is fabricated by CMOS‐compatible materials – ruthenium, with a maskless etching‐free process. After a 5‐Mrad total ionizing dose test, the results showed non‐degradation performance, memory window ≈ 40 with operation power < 2 mW, > 8k endurance cycles, and 15‐year retention, which can be
Yao‐Feng Chang   +3 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

open access: yesAdvanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio   +2 more
wiley   +1 more source

Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Electrical properties of NbO2‐based memristors are studied and the ability to engineer them for computing applications is explored. By employing noise spectroscopy and by utilizing a dimerization model of insulators, negative differential resistance and inhomogeneous conduction regions are explained.
Nitin Kumar   +4 more
wiley   +1 more source

Two‐Terminal MoS2‐Based Retinomorphic Devices with Enhanced Synaptic Plasticity

open access: yesAdvanced Electronic Materials, EarlyView.
The two‐terminal retinormorphic devices are demonstrated on the functionalized substrate through plasma treatment. The functionalized substrate serves recombination centers, which can control the decay dynamics of excited carriers. These make modulating synaptic plasticity possible in two‐terminal retinormorphic devices.
Younghoon Lim   +8 more
wiley   +1 more source

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