Results 291 to 300 of about 7,018,705 (370)

Wireless Technologies for Wearable Electronics: A Review

Advanced Electronic Materials, EarlyView.
This review discusses recent advancements in wireless wearable electronics, focusing on communication technologies and power solutions. It covers key design considerations, explores wireless protocols from short‐ to long‐range networks, and examines powering methods such as integrated sources and energy harvesting.
Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae‐Woong Jeong   +8 more
wiley   +1 more source

Defect Density of States of Tin Oxide and Copper Oxide p‐type Thin‐film Transistors

Advanced Electronic Materials, EarlyView.
The complete band‐to‐band defect density of states driving p‐mode operation in tin and copper oxide transistors is obtained through photoconduction microscopy over a 0.15 to 3.5 eV tunable laser range. These analytical maps of subgap defect density with the extracted TFT bandgaps, show how ideal p‐mode operation may be achieved in metal oxide thin‐film
Måns J. Mattsson, Kham M. Niang, Jared Parker, David J. Meeth, John F. Wager, Andrew J. Flewitt, Matt W. Graham   +6 more
wiley   +1 more source

Materials Selection Principles for Designing Electro‐Thermal Neurons

Advanced Electronic Materials, EarlyView.
Materials property – performance relations are established for new and old electrical materials leveraged as electro‐thermal oscillators emulating neuron dynamics. Robust, reconfigurable, high frequency, low power characteristics are explicitly tied to highly nonlinear electrical transport, small specific heat, and greater electrical than thermal ...
Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown   +6 more
wiley   +1 more source

Self‐Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection

Advanced Electronic Materials, EarlyView.
This paper presents a self‐aligned heterojunction gate phototransistor that eliminates the need for high‐precision alignment tools. The device achieves a high responsivity of 2.9 × 105 A W−1 and a specific detectivity of 9.6 × 1013 Jones, comparable to the performance of non‐self‐aligned devices requiring complex fabrication.
Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang   +9 more
wiley   +1 more source

High Resistivity of Single Crystal CsPbBr3 Semiconductor for Radiation Detection via Proposed Temperature‐Concentration Balance Method

Advanced Electronic Materials, EarlyView.
This study introduces a temperature‐concentration balance (TCB) method to grow high‐quality CsPbBr₃ single crystal with improved phase purity and structural stability. The crystals exhibits a sharp emission peak at 527 nm, narrow full width at half maximum (21.1 nm), and high resistivity (up to 3.97 × 10¹⁰ Ω·cm).
Xuebao Zhang, Qingbo Wang, Ying Gao, Junying Zhang, Youpeng Wu, Peijie Ma, Lin Ma, Jianing Cai, Fenglei Niu, Qiang Zhao, Yunchao Tang, Junwei Bian, Chenming Liang, Chunxia Shen, Zeqian Wu, Fang Liu, Zhiling Hou, Jinxing Cheng   +17 more
wiley   +1 more source

Analysis of the Regionality of the Number of Tweets Related to the 2011 Fukushima Nuclear Power Station Disaster: Content Analysis.

JMIR Public Health Surveill, 2018
Aoki T, Suzuki T, Yagahara A, Hasegawa S, Tsuji S, Ogasawara K.   +5 more
europepmc   +1 more source

Electrically‐Driven Metal‐Insulator Transitions Emerging from Localizing Current Density and Temperature

Advanced Electronic Materials, EarlyView.
Negative differential resistance (NDR) is a key electronic response enabling two‐terminal artificial neurons. Interactions between electro‐thermal localizations and metal–insulator transitions (MITs) are investigated in a 3D multiphysics simulation of a lateral device. These findings demonstrate that the MIT nucleates in regions of high current density,
Adelaide Bradicich, Yeonju Yu, Timothy D. Brown, Fatme Jardali, Suhas Kumar, R. Stanley Williams, Patrick J. Shamberger   +6 more
wiley   +1 more source

Low‐Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri‐Layer Elastomer Dielectric for Gas Sensing

Advanced Electronic Materials, EarlyView.
The transistor based on tri‐layer dielectric operated at a low voltage of −5 V, with mobility of 2.01 cm2V−1s−1 and switching current ratio up to 105, enabling its application as a NO₂ gas sensor. Abstract Stretchable organic field‐effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as ...
Xiaoying Zhang, Xiangxiang Li, Weiyu Wang, Hongchen Jiang, Xinran Zheng, Huiqi Yang, Xin Ye, Hui Yang   +7 more
wiley   +1 more source

Exotic Photothermal Response in Ti‐Based MXene Optoelectronic Devices

Advanced Electronic Materials, EarlyView.
This work uncovers the photothermal response of Ti‐based MXene devices to laser irradiation under different experimental conditions. Ti2CTx exhibits an asymmetric photothermal response, characterized by three orders of magnitude slower relaxation kinetics than Ti3C2Tx.
Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi   +4 more
wiley   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials, EarlyView.
A 3‐terminal SOT‐MRAM device that integrates the topological insulator and the perpendicular magnetic tunnel junction. The double magnetic layers with different saturation magnetizations are employed as the recording layer of TIs‐pMTJ. By breaking the chiral symmetry of these states via the interlayer DMI, the field‐free deterministic SOT switching is ...
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
wiley   +1 more source