Results 151 to 160 of about 2,363,364 (342)

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

open access: yesAdvanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng   +9 more
wiley   +1 more source

V2CTx MXene as a Sacrificial Promoter for NiFe Catalyst for Anion Exchange Membrane Electrolyzers

open access: yesAdvanced Science, EarlyView.
These findings demonstrate that V2CTx functions beyond passive conductive support as an active electronic participant whose structural legacy sustains durable performance even after vanadium leaching in Anion Exchange Membrane (AEM) Electrolysers. ABSTRACT Nickel‐iron layered double hydroxides (NiFe‐LDH) show excellent activity, their poor conductivity
Bastian Schmiedecke   +12 more
wiley   +1 more source

From Label‐Free Multiphoton Imaging to Pathological Reports: A Vision‐Language Breast Cancer Margin Pathological Diagnosis System

open access: yesAdvanced Science, EarlyView.
MarginPath is a novel vision‐language system that automates breast cancer margin assessment using a single label‐free multiphoton microscopy image. By integrating tumor‐associated collagen signatures with virtual H&E imaging, it generates accurate margin heatmaps and comprehensive diagnostic reports.
Shu Wang   +15 more
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave   +14 more
wiley   +1 more source

Imaging Electric Polarization Switching in Multilayer Graphene

open access: yesAdvanced Science, EarlyView.
Domain wall sliding‐induced electric polarization switching is directly observed for the first time in multilayer graphene, enabled by a novel optical readout method. The polarization switching is realized upon application of global and local electric fields, and mechanical forces between neighboring polar domains of opposite out‐of‐plane polarizations
Zhou Zhou   +10 more
wiley   +1 more source

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