Results 251 to 260 of about 1,990,014 (344)

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha   +18 more
wiley   +1 more source

Towards net zero: A technological review on the potential of space-based solar power and wireless power transmission. [PDF]

open access: yesHeliyon
Alam KS   +13 more
europepmc   +1 more source

American Power Transmission [PDF]

open access: yesScientific American, 1908
openaire   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

open access: yesAdvanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed   +7 more
wiley   +1 more source

Reevaluating the Activity of ZIF‐8 Based FeNCs for Electrochemical Ammonia Production

open access: yesAdvanced Functional Materials, EarlyView.
Though receiving much attention, the field of electrochemical nitrogen reduction reaction (eNRR) to ammonia is marked by doubts about whether this reaction is possible in aqueous media. This work sheds light on this question for iron single‐atom on N‐doped carbon (FeNC) catalysts—a class of well‐known catalysts that is also worth testing for the sister
Caroline Schneider   +6 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

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