Results 171 to 180 of about 224,627 (303)

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

open access: yesAdvanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Molecular engineering of CRISPR/Cas12a: from activity enhancement to exponential signal amplification. [PDF]

open access: yesChem Sci
Li QN   +9 more
europepmc   +1 more source

Incorporation of Bondi K–factor into Exponential Function, and Some Related Problems

open access: yes, 2014
This study investigated the incorporation of Bondi K–factor into exponential function, and some related problems. The results obtained were as follows. The incorporation of Bondi K–factor suggested another description of exponential function and of Euler’
下條, 雅敬, Shimojo, Masataka
core  

Mitigating Efficiency Roll‐Off in Phosphor‐Sensitized Fluorescence OLEDs via Molecular Polarity‐Based Benzofuropyridine Host Engineering

open access: yesAdvanced Optical Materials, EarlyView.
Positional isomerism in dibenzofuran‐based n‐type hosts modulates molecular polarity, charge‐transport balance, and emissive‐layer packing. The higher‐polarity BFPDB‐2 host facilitates efficient energy funneling, reduced aggregation, and preferential dipole orientation, leading to phosphor‐sensitized fluorescence OLEDs with enhanced external quantum ...
Nargis Ali   +3 more
wiley   +1 more source

Direct Measurement of the Singlet Lifetime and Photoexcitation Behavior of the Boron Vacancy Center in Hexagonal Boron Nitride

open access: yesAdvanced Optical Materials, EarlyView.
Negatively charged boron vacancy defects in hexagonal boron nitride promise near‐surface quantum sensing, but their internal spin transition rates are only partly understood. This work directly measures the defect's singlet‐state lifetime, 15(3) ns, using a nanosecond rise‐time dual‐pulse photoluminescence‐recovery method, and shows that high laser ...
Richard A. Escalante   +11 more
wiley   +1 more source

Multiple bursting patterns in lateral habenula neurons: Experiments and computational model. [PDF]

open access: yesJ Physiol
Fedorov D   +5 more
europepmc   +1 more source

Color Center Formation in Silicon‐On‐Insulator for On‐Chip Photonic Integration

open access: yesAdvanced Optical Materials, EarlyView.
ABSTRACT Color centers in silicon have great potential as single photon sources for quantum technologies. Some of them – like the T center – also possess optically‐active spins that enable spin‐photon interfaces for generating entangled photons and multi‐spin registers. This paper explores the generation of several types of color centers in silicon for
Arnulf J. Snedker‐Nielsen   +15 more
wiley   +1 more source

Mechanistic insights into E. coli recovery from growth arrest. [PDF]

open access: yesNat Commun
Hassan AH   +10 more
europepmc   +1 more source

Mono‐ and Bilayer MoS2 Photodetectors: High‐Performance Broadband AC Readout With Color‐Selective Noise Suppression

open access: yesAdvanced Optical Materials, EarlyView.
Mono‐ and bilayer MoS2 photodetectors enable wavelength‐selective AC photoresponse and optically driven capacitance modulation under visible illumination. Green excitation produces the strongest cumulative capacitive response, consistent with trap‐mediated charge accumulation at mono/bilayer and metal–MoS2 interfaces.
Pegah Zandi   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy