Results 151 to 160 of about 5,522,853 (247)

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

open access: yesAdvanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park   +8 more
wiley   +1 more source

Crystallized Domain Walls in HfO2 Enable Chessboard‐Type Ultra‐High‐Dense Ferroelectric Memory

open access: yesAdvanced Science, EarlyView.
In general, DWs in ferroelectrics stabilize within a widely spread transition region between two oppositely polarized domains, which severely limits the achievable memory density. Here, the reported DWs in HfO2 constitute perfect crystalline structures along arbitrary crystallographic directions, enabling the formation of the narrowest square‐shaped ...
Pawan Kumar   +4 more
wiley   +1 more source

Integrable String Models in Terms of Chiral Invariants of SU(n), SO(n), SP(n) Groups

open access: yesSymmetry, Integrability and Geometry: Methods and Applications, 2008
We considered two types of string models: on the Riemmann space of string coordinates with null torsion and on the Riemman-Cartan space of string coordinates with constant torsion.
Victor D. Gershun
doaj  

On the degress of primitive permutation groups

open access: yesMathematische Zeitschrift, 1982
Cameron, P., Neumann, P.M., Teague, D.N.
openaire   +2 more sources

Ab Initio Thermoelectric Transport Calculations of Alloyed Half‐Heuslers

open access: yesAdvanced Science, EarlyView.
The effect of alloying on the electronic transport of half‐Heusler thermoelectric materials is explored using a fully ab initio approach. A novel method is developed that combines calculations of alloyed supercells with Boltzmann transport, considering the full energy and momentum dependent scattering processes from first principles extracted ...
Ankit Kumar   +2 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

open access: yesAdvanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee   +5 more
wiley   +1 more source

SAV1 in Cooperation With FKBP52 Participates in Implantation

open access: yesAdvanced Science, EarlyView.
The MST‐SAV1 complex modulates FKBP52 phosphorylation to fine‐tune PR activity, ensuring timely uterine transition to receptivity under estrogen signaling for implantation. Stromal SAV1 scaffolds MST1/2‐mediated FKBP52 phosphorylation via noncanonical Hippo to promote PR activity.
Yuhan Shao   +10 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Large Carbonaceous Chondrite Parent Bodies Favored by Abundance–Volatility Modeling: A Possible Chemical Signature of Pebble Accretion

open access: yesThe Planetary Science Journal
Primitive meteorite groups such as the Vigarano, Mighei, and Karoonda carbonaceous chondrites have enigmatic patterns of elemental abundances, with moderately volatile elements—those that transition from vapor to condensate between ∼400 and ∼900 K ...
Jeremy W. Boyce   +3 more
doaj   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi   +3 more
wiley   +1 more source

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