Results 211 to 220 of about 5,680,994 (262)

Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, we developed a cost‐efficient neural probe by replacing traditional gold with an aluminum‐based Ti/Al/Ni multilayer stack. Optimizing this metal architecture suppressed oxidation and ensured robust electrical stability, achieving signal quality comparable to standard gold probes. It enables a highly accessible and economical solution for
Sehwan Park   +6 more
wiley   +1 more source

Reference Electrode‐Free Nitrate Sensing via Differential Temperature‐Modulated Potentiometry in Printed Symmetric SC‐ISEs

open access: yesAdvanced Electronic Materials, EarlyView.
This work proposes and validates a method for measuring nitrate concentration with printed, solid‐state ion‐selective electrodes that does not require a stable reference electrode. The approach uses brief, localized heating pulses to generate a concentration‐dependent voltage response that is drift‐resilient and log‐linear from 0.1 to 100 mm, while ...
Lucas Lahann   +2 more
wiley   +1 more source

Performance of a GPU- and time-efficient pseudo-3D network for magnetic resonance image super-resolution and motion artifact reduction. [PDF]

open access: yesSci Rep
Li H   +10 more
europepmc   +1 more source

A Full Physical Strategy for Electrical Contacts on Laser‐Induced Graphene (LIG) Electrodes

open access: yesAdvanced Electronic Materials, EarlyView.
A fully dry fabrication strategy combining PVD and dual‐laser processing enables direct integration of laser‐induced graphene with metallic current collectors. Ultralow Au‐LIG contact resistance is achieved without binders, adhesives, or chemical treatments, while preserving electrochemical performance.
Davide Arcoraci   +9 more
wiley   +1 more source

Negative Feedback in Hf0.5Zr0.5O2 Resistive Memory: Feigenbaum Route Toward Two‐Terminal Pseudo‐Random Number Generation and Neural Network Instabilities

open access: yesAdvanced Electronic Materials, EarlyView.
Resistively switching TiN/Hf0.5Zr0.5/Au valance‐change memory devices show period‐doubling bifurcations, arising from competing influences of filamentary counter‐eightwise filamentary switching and eigthwise electrochemical oxygen exchange at the active electrode.
Sebastian Obernberger   +4 more
wiley   +1 more source

Substrate morphology modulates bacteriophage mobility and alters bactericidal potency. [PDF]

open access: yesPLoS One
Wang H   +6 more
europepmc   +1 more source

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