Results 171 to 180 of about 6,839 (223)

PSpice Modeling of Three-Phase Transformer

2007 39th North American Power Symposium, 2007
PSpice is being used as a simulation tool for analysis and design of power electronic circuits. A transformer is an integral part of power electronic equipment and it is usually the input stage of a high power converter. A good model of the transformer is needed to evaluate the performance parameters of power converters.
Mark Bloech, M. H. Rashid
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Simulating MATLAB system models in PSpice

2015 International Conference on Signal Processing and Communication (ICSC), 2015
This paper describes a new technique to simulate MATLAB system models in PSpice environment. The algorithmic component of the design is developed using MATLAB, and then exported to a C-model which can be read and simulated by PSpice using its newly developed PSpice Device Modeling Interface (DMI).
Parag Choudhary, Abha Jain
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Modeling of broadband cavities in PSpice

2023
PSpice models for the SIS100 barrier bucket cavity and the ESR barrier bucket cavity have been created and compared with measurements.
Harzheim, Jens, Domont-Yankulova, Dilyana, Königstein, Robert, Klingbeil, Harald, Frey, Michael, Hülsmann, Peter   +5 more
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PSpice switch-based versatile memristor model

2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013
This paper proposes a simple PSpice implementation of the boundary condition model for memristor nano-structures. The boundary condition model is equivalent to the linear drift model except for the introduction of adaptable boundary conditions, which impose an activation threshold of the state dynamics at the boundaries, i.e.
Alon Ascoli, Ronald Tetzlaff, Fernando Corinto, Marco Gilli   +3 more
openaire   +1 more source

Analog behavioral modeling using PSPICE

Proceedings of the 32nd Midwest Symposium on Circuits and Systems, 2003
Modeling new device types requires more than the polynomial sources provided by SPICE. PSPICE extensions allow arbitrary equations and/or table lookup. These extensions are also useful for blackbox system-level modeling. Examples of both types of behavioral modeling are presented. >
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IGCT Circuit Model Based on Pspice Modeling Platform

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2018
In this paper, the structural features and operation principle of Integrated Gate Commutated Thyristors (IGCT) are analyzed, a M-2T-3R circuit model of IGCT is built based on Pspice modeling platform, which consist of one MOSFET, two transistors and three resistances, and the MOSFET is SiC power MOSFET model. Then the key model parameters are extracted
Yang Song, Cailin Wang, Wuhua Yang, Jing Yang   +3 more
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New PSPICE model for power MOSFET devices

24th International Spring Seminar on Electronics Technology. Concurrent Engineering in Electronic Packaging. ISSE 2001. Conference Proceedings (Cat. No.01EX492), 2002
The common PSPICE model for the power MOSFET device is well known to CAD designers. This paper addresses the problem of how to correctly simulate a nonlinear device by modeling the nonlinear components of its PSPICE model: drain-to-source resistance vs. temperature, drain-to-source and gate-to-source capacitance vs. voltage. By comparing the simulation
G. Chindris, O. Pop, G. Alin, F. Hurgoi
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Gas Discharge Tube Modeling With PSpice

IEEE Transactions on Electromagnetic Compatibility, 2008
Gas discharge tubes (GDT)-sometimes named spark gaps (SGs)-are commonly used to suppress transients in many applications, from high-frequency communications to ac medium-power supply lines. The sharp GDT breakdown characteristics enable them to provide suitable transient suppression performance.
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Lumped charge PSPICE model for high-voltage IGBTs

Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2002
A novel physics-based PSPICE IGBT model is presented. Its main peculiarities are the accuracy of the results both at low and high voltages. The employed approach is an evolution of the lumped-charge standard approach, in the sense that it additionally includes an accurate model for depletion capacitances and carrier mobilities, including carrier ...
BUSATTO, Giovanni, IANNUZZO, Francesco, P. GRIMALDI   +2 more
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Power PiN diode model for PSPICE simulations

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005., 2005
An accurate physics based model for power PiN diodes is derived and implemented as a subcircuit into the PSPICE circuit simulator. The model is based on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the finite difference method.
G.M. Buiatti, F. Cappelluti, G. Ghione
openaire   +1 more source