Results 101 to 110 of about 40,667 (248)

A.C. ELECTRIC DRIVE WITH PULSE-WIDTH MODULATION CONTROL

Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика, 2014
The paper proposes an original method for pulse-width modulation (PWM) of A.C. voltage. The method makes it possible to improve harmonic composition of the voltage.
V. P Belyaev
doaj  

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Wireline Equalization using Pulse-Width Modulation

Copper channels suffer from attenuation and dispersion, caused by the skin effect and dielectric loss. Furthermore, they suffer from reflections, caused by impedance discontinuities. As a consequence, the achievable bit rate is limited by intersymbol interference: neighboring symbols interfere with each other.
openaire   +1 more source

Pulse-Width Modulated RF Transmitters

, 2017
The market for wireless portable devices has grown signicantly over the recent years.Wireless devices with ever-increased functionality require high rate data transmissionand reduced costs.
openaire   +3 more sources

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source

Uncovering the Origin of Efficiency Roll‐Off in TADF OLEDs

Advanced Functional Materials, EarlyView.
OLEDs based on thermally activated delayed fluorescent (TADF) materials often suffer from a severe drop in efficiency at high brightness levels. This work presents a technique to uncover the source of this efficiency drop, and quantifies the exciton‐exciton and exciton‐polaron annihilation processes responsible for efficiency losses in our TADF OLEDs ...
Liam G. King, Kou Yoshida, Arvydas Ruseckas, Ifor D. W. Samuel   +3 more
wiley   +1 more source

Voltage‐Gated Dedoping of n‐Doped Poly(benzodifurandione) as an Interfacial Protective Mechanism in Electrochromic Devices

Advanced Functional Materials, EarlyView.
Electrochromic polymer stability under overpotential is improved by inserting an ultrathin, transparent n‐doped poly(benzodifurandione) interlayer between indium tin oxide and a poly(3,4‐propylenedioxythiophene)‐based electrochromic polymer. The interlayer supports rapid switching at operating bias, then becomes resistive near +0.8 V to suppress excess
Priyanka Rout, Palak Mehra, Won‐June Lee, Liyan You, Jianguo Mei   +4 more
wiley   +1 more source

Synergistic All‐in‐One Electroceutical Platform Utilizing a Plasma–Photodynamic Hybrid Approach for Enhanced Wound Healing

Advanced Functional Materials, EarlyView.
A flexible hybrid patch integrating a robust cold atmospheric plasma (CAP) system with a high‐power, ultrathin bio‐OLED was developed to enable synergistic wound healing. This multimodal therapy, combining plasma and photodynamic treatment, enhanced angiogenesis, cell proliferation, and collagen deposition, demonstrating superior in vivo efficacy and ...
Jun‐Yeop Song, Hyun Cheol Bang, Young Hyun Son, Dae‐In Ha, Eun‐Ju Hong, Sun‐Woo Lee, Jeongsook Kim, Doyeong Kim, Sang‐Min Park, Kyu Pil Lee, Hyo‐Jung Kwon, Jeong Hyun Kwon   +11 more
wiley   +1 more source