Results 141 to 150 of about 195,273 (332)

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li   +7 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Demonstration of a Filterless, Multi-Point, and Temperature-Independent Fiber Bragg Grating Dynamical Demodulator Using Pulse-Width Modulation. [PDF]

open access: yesSensors (Basel), 2020
Rosolem JB   +7 more
europepmc   +1 more source

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