Results 221 to 230 of about 195,273 (332)
Critical roles of amorphous and crystalline phases in polymer‐based mixed ionic‐electronic conductors for organic electrochemical synaptic transistors using conjugated regioregular‐block‐regiorandom copolymers are demonstrated. Amorphous phases contribute to gradual polaron formation and strong ion trapping by bipolarons, leading to improved synaptic ...
Kwang‐Hun Choi+10 more
wiley +1 more source
OTDR Development Based on Single-Mode Fiber Fault Detection. [PDF]
Liu H, Zhao T, Zhang M.
europepmc +1 more source
Pulse-Width Modulation with Current Uniformization for AM-OLED;
Mutsumi Kimura+5 more
openalex +2 more sources
Ionic Conductive Textiles for Wearable Technology
Recent advances in ionic conductive textiles for wearable technology are summarized, with a focus on soft ionic conductors that exhibit skin‐like flexibility and tissue‐like ion dynamics. Their structures, key characteristics, manufacturing methods, and diverse applications are reviewed.
Lingtao Fang, Yunlu Zhou, Qiyao Huang
wiley +1 more source
Selective Notch Frequency Technology for EMI Noise Reduction in DC-DC Converters: A Review. [PDF]
Kobori Y, Sun Y, Kobayashi H.
europepmc +1 more source
The Study Methods of Increase Efficiency Algorithms Pulse width Modulation in AC Electric Drives
Bogdan Vasilev
openalex +2 more sources
Measuring pulse-width modulation converter
D.N. Turenko, I. Yu. Sergeyev
openaire +2 more sources
Brain‐Inspired In‐Memory Data Pruning and Computing with TaOx Mem‐Selectors
In article number 2502168, Zhongrui Wang, Xiaoxin Xu, Dashan Shang, and co‐workers present the first nanoscale Mem‐Selector device that integrates both nonvolatile resistive memory and volatile threshold switching functionalities for visual data pruning.
Yi Li+15 more
wiley +1 more source
High-Order Domain-Wall Dark Harmonic Pulses and Their Transition to H-Shaped and DSR Pulses in a Dumbbell-Shaped Fiber Laser at 1563 nm. [PDF]
Reyes-Mora A+8 more
europepmc +1 more source
A frequency switching (FS) neuristor is proposed, comprising a Mott memristor and a valence change mechanism (VCM) memristor. The FS neuristor exhibits a multi‐level frequency–voltage (f–V) characteristics, enabling the implementation of neuronal intrinsic plasticity transfer functions.
Woojoon Park+12 more
wiley +1 more source