Results 221 to 230 of about 195,273 (332)

Role of Amorphous Phases in Mixed Conduction of Conjugated Regioblock Copolymers for Organic Electrochemical Synaptic Transistors

open access: yesAdvanced Materials, EarlyView.
Critical roles of amorphous and crystalline phases in polymer‐based mixed ionic‐electronic conductors for organic electrochemical synaptic transistors using conjugated regioregular‐block‐regiorandom copolymers are demonstrated. Amorphous phases contribute to gradual polaron formation and strong ion trapping by bipolarons, leading to improved synaptic ...
Kwang‐Hun Choi   +10 more
wiley   +1 more source

Pulse-Width Modulation with Current Uniformization for AM-OLED;

open access: gold, 2015
Mutsumi Kimura   +5 more
openalex   +2 more sources

Ionic Conductive Textiles for Wearable Technology

open access: yesAdvanced Materials, EarlyView.
Recent advances in ionic conductive textiles for wearable technology are summarized, with a focus on soft ionic conductors that exhibit skin‐like flexibility and tissue‐like ion dynamics. Their structures, key characteristics, manufacturing methods, and diverse applications are reviewed.
Lingtao Fang, Yunlu Zhou, Qiyao Huang
wiley   +1 more source

Measuring pulse-width modulation converter

open access: yesElectronics and Control Systems, 2011
D.N. Turenko, I. Yu. Sergeyev
openaire   +2 more sources

Brain‐Inspired In‐Memory Data Pruning and Computing with TaOx Mem‐Selectors

open access: yesAdvanced Materials, EarlyView.
In article number 2502168, Zhongrui Wang, Xiaoxin Xu, Dashan Shang, and co‐workers present the first nanoscale Mem‐Selector device that integrates both nonvolatile resistive memory and volatile threshold switching functionalities for visual data pruning.
Yi Li   +15 more
wiley   +1 more source

High-Order Domain-Wall Dark Harmonic Pulses and Their Transition to H-Shaped and DSR Pulses in a Dumbbell-Shaped Fiber Laser at 1563 nm. [PDF]

open access: yesMicromachines (Basel)
Reyes-Mora A   +8 more
europepmc   +1 more source

Frequency Switching Neuristor for Realizing Intrinsic Plasticity and Enabling Robust Neuromorphic Computing

open access: yesAdvanced Materials, EarlyView.
A frequency switching (FS) neuristor is proposed, comprising a Mott memristor and a valence change mechanism (VCM) memristor. The FS neuristor exhibits a multi‐level frequency–voltage (f–V) characteristics, enabling the implementation of neuronal intrinsic plasticity transfer functions.
Woojoon Park   +12 more
wiley   +1 more source

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