Results 141 to 150 of about 460,467 (309)

The cell size effect of closed cellular materials fabricated by pulse current assisted hot isostatic pressing on the compressive behavior

open access: yes, 2006
A hot isostatic pressing technique assisted by the pulse current supplied by a spark plasma sintering system was used to fabricate metallic closed cellular materials.
Song ZL, Satoshi Kishimoto
core  

Hot‐Film and Calorimetric Methods With Transient Heating for Measurement of High Biofluid Flow Rate

open access: yesAdvanced Functional Materials, EarlyView.
Accurate measurement of biofluid flow rate is vital for clinical diagnostics. We propose a transient heating strategy using short thermal pulses and peak temperature tracking to enhance the flow sensitivity of the hot‐Film and calorimetric methods. Simulations show how optimal heating time maximizes sensitivity across flow rates.
Yuanting Wei   +8 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Design of a pulse-current transformer

open access: yesElectronics Letters, 1969
It is shown that the speed of response of a pulse-current transformer is mainly limited by the propagation delay along the secondary winding.
openaire   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Prospecções da natureza física da soldagem MIG automática de ligas de alumínuio [PDF]

open access: yes, 2013
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Mecânica, Florianópolis, 2013Como processo de fabricação, a soldagem tem um papel de destaque dentro dos setores naval e ...
Marques, Cleber
core  

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

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