Results 261 to 270 of about 925,843 (350)

Melt Grafting of Geometry‐Tailored Voltage Stabilizers for High‐Performance Polypropylene Insulation

open access: yesAdvanced Functional Materials, EarlyView.
A scalable one‐step melt grafting strategy is developed to enhance the dielectric properties of isotactic polypropylene by covalently incorporating thermally stable aromatic voltage stabilizers. This solvent‐free approach improves volume resistivity and DC breakdown strength through deep trap formation and charge localization, offering a sustainable ...
Nazirul Mubin bin Normansah   +9 more
wiley   +1 more source

Fully Bio‐Based Gelatin Organohydrogels via Enzymatic Crosslinking for Sustainable Soft Strain and Temperature Sensing

open access: yesAdvanced Functional Materials, EarlyView.
Enzymatically crosslinked gelatin‐based organohydrogels, fabricated through a fully bio‐based and scalable process, exhibit exceptional strain and temperature sensing capabilities with minimal interference from environmental humidity. These transparent, stretchable, and ionically conductive materials operate without synthetic fillers or dopants.
Pietro Tordi   +7 more
wiley   +1 more source

Correction: Real-time changes in pulse pressure during a 10-second end-expiratory occlusion test reliably detect preload responsiveness. [PDF]

open access: yesCrit Care
Gavelli F   +10 more
europepmc   +1 more source

Quantum‐Grade Nanodiamonds from a Single‐Step, Industrial‐Scale Pressure and Temperature Process

open access: yesAdvanced Functional Materials, EarlyView.
Novel method for creation of nitrogen‐vacancy centers in 50‐nm nanodiamonds based on high‐temperature plastic deformation is demonstrated. Compared to the electron irradiation approach, it yields nitrogen‐vacancy centers with significantly improved charge stability, T1 relaxation time, and optical Rabi contrast.
Yahua Bao   +17 more
wiley   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

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