Results 141 to 150 of about 105,987 (304)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

open access: yesAdvanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan   +6 more
wiley   +1 more source

Conductive Bonding and System Architectures for High‐Performance Flexible Electronics

open access: yesAdvanced Functional Materials, EarlyView.
This review outlines bonding technologies and structural design strategies that support high‐performance flexible and stretchable electronics. Bonding approaches such as surface‐activated bonding and anisotropic conductive films, together with system‐level architectures including buffer layers and island‐bridge structures, possess distinct mechanical ...
Kazuma Nakajima, Kenjiro Fukuda
wiley   +1 more source

Electrodeposition and characterization of C/Sn thin films as a high-performance anode for li-ion batteries: effect of pulsed electrodeposition parameters

open access: yesMaterials for Renewable and Sustainable Energy
A two-step electrodeposition approach was applied to deposit Sn/C layers on a Ni foam substrate. The first step was the deposition of the Sn layer using two electrodeposition modes (direct and pulsed electrodeposition) with different parameters (duty ...
R. Abdel-Karim   +2 more
doaj   +1 more source

Properties of Ni-W alloys electrochemically deposited by direct and pulse current

open access: yes, 2005
Prevlake legure Ni-W su elektrohemijski taložene iz amonijačno-citratnog elektrolita, na rotirajuću disk elektrodu od čelika, konstantnom i pulsirajućom strujom. Cilj rada je ispitivanje uticaja parametara taloženja sastava legure i termičkog tretmana na morfologiju i mikrotvrdoću dobijenih prevlaka.
Obradović, Maja   +7 more
openaire   +1 more source

Electric Field‐Dependent Conductivity as Probe for Charge Carrier Delocalization and Morphology in Organic Semiconductors

open access: yesAdvanced Functional Materials, EarlyView.
Applying a high electric field to a doped organic semiconductor heats up the charge carrier distribution beyond the lattice temperature, enhancing conductivity. It is shown that the associated effective temperature can be used to extract the effective localization length, which is a characteristic length scale of charge transport and provides ...
Morteza Shokrani   +4 more
wiley   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

open access: yesAdvanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim   +3 more
wiley   +1 more source

Gourd‐Inspired Design of Unit Cell with Multiple Gradients for Physiological‐Range Pressure Sensing

open access: yesAdvanced Functional Materials, EarlyView.
Gourd‐shaped micro‐dome arrays with coordinated modulus, conductivity, and geometric gradients co‐optimize sensitivity and linearity in piezoresistive tactile sensors. Under pressure, a solid upper dome embeds into a porous lower dome, triggering rapid contact‐area growth and series‐to‐parallel conduction, enabling unsaturated, intensity‐resolved ...
Jiayi Xu   +6 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Fabrication of Co/Cu Multilayered Nanowires Using a Pulsed Current Deposition Technique

open access: yesFabrication of Co/Cu Multilayered Nanowires Using a Pulsed Current Deposition Technique
text ナノダイナミクス国際シンポジウム 平成22年1月21日(木) 於長崎大学 Nagasaki Symposium on Nano-Dynamics 2010 (NSND2010), January 21, 2010, Nagasaki University, Nagasaki, Japan, Invited Lecture Nagasaki Symposium on Nano-Dynamics 2010 (NSND2010), p.23-24 ...
openaire   +1 more source

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