Results 171 to 180 of about 105,987 (304)

Anomalous Pressure‐Temperature Ultrahigh Sensitivities in Atomically Engineered Carbonitride MXenes for Multifunctional Wearable Human–Machine Interfaces: Joint Computational–Experimental Elucidations

Advanced Functional Materials, EarlyView.
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra, Ju‐Hyoung Han, Hyun Jin Kang, Jeong Eun Byun, Seonghun Lee, Sanghyuk Lee, Yeseul Son, Jaeeun Park, Tae Joo Shin, Youngho Kang, Jung Woo Lee, Soon‐Yong Kwon, Soo‐Hyun Kim   +12 more
wiley   +1 more source

Dual-step pulsed electrodeposition enables microstructural control and redox kinetics in iron oxide films. [PDF]

Sci Rep
Chi PW, Lin JX, Wu PM, Lin HE.
europepmc   +1 more source

Additive Manufacturing of NiTi Shape Memory Alloys for Elastocaloric Applications: A Review

Advanced Functional Materials, EarlyView.
Additive manufacturing enables complex NiTi architectures that overcome key limitations in elastocaloric refrigeration, including poor heat transfer and high mechanical work input. This review surveys recent advances in LPBF‐ and DED‐fabricated NiTi shape memory alloys for elastocaloric applications, highlighting process–structure–performance ...
Ignatius Andre Setiawan, Mohammad Mehrali, Jaka Tušek, Shiva Mohajerani, Xiebin Wang, Dermot Brabazon, Mohammad Elahinia, Mehrshad Mehrpouya   +7 more
wiley   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

Why does pulsed laser-deposited amorphous NiO _<i>x</i> serve as an excellent electrode material for revolutionizing glucose detection? [PDF]

RSC Adv
Parab A, Jejurikar SM, Salunke J, Late D.   +3 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Pulsed Dynamic Water Electrolysis: Mass Transfer Enhancement, Microenvironment Regulation, and Hydrogen Production Optimization. [PDF]

Nanomicro Lett
Zhang X, Zhou W, Meng X, Huang Y, Yu Y, Zhao H, Wang L, Sun F, Gao J, Zhao G.   +9 more
europepmc   +1 more source

Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry

, 2003
Endoh, M, Hattori, T, Kurosawa, M, Oda, S, Tsuchiya, Yoshishige, Tung, R. T   +5 more
core   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Investigation of electrical transport mechanisms in an n-CdIn₂Se₄/Pt thin film Schottky diode fabricated by pulsed laser deposition. [PDF]

RSC Adv
Dhruv SD, Dudharejiya T, Sharko SA, Serokurova AI, Novitskii NN, Goroshko DL, Rayani P, Jangale J, Markna JH, Kataria B, Dhruv DK.   +10 more
europepmc   +1 more source