Room temperature magnetron sputtering and laser annealing of ultrathin MoS2 for flexible transistors
Vacuum, 2019Pulsed magnetron sputtering and subsequent laser annealing represents a scalable route for producing two-dimensional (2D) semiconducting grade molybdenum disulfide (MoS2) directly on the surface of flexible polymer substrates.
B. Sirota, N. Glavin, A. Voevodin
semanticscholar +1 more source
Carbon nitride films deposited by reactive sputtering and pulsed laser ablation
Thin Solid Films, 2004Abstract Carbon nitride films were deposited by reactive sputtering process and by pulsed laser ablation process with substrate bias. By applying the RF bias, it enables the ion irradiation on to the depositing film surface continuously. ECR plasma source was used for reactive sputtering.
Toshiaki Yasui +4 more
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Pulsed laser annealing of rf sputtered amorphous Si-H films doped with arsenic
Journal of Applied Physics, 1982Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by rf cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched ruby laser. Topographic analysis of the laser irradiated layers indicate that a crater is formed due to an evaporation of material which could be related
Fogarassy, E. +4 more
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Contribution of vaporization and boiling to thermal-spike sputtering by ions or laser pulses
Physical Review E, 1999Here we consider what, in our terminology, we designate as normal vaporization, normal boiling, and phase explosion. In the case of vaporization, one is dealing with the emission of particles (atoms or molecules) from the extreme outer surface of either a solid or liquid for any temperature exceeding 0 K.
R. Kelly, Miotello, Antonio
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Determination of atomic lifetimes using pulsed laser excitation of sputtered metal vapours
Journal of Physics B: Atomic and Molecular Physics, 1981A lifetime method based on measuring the fluorescence decay following pulsed laser excitation of sputtered metal vapours is described. The method is applicable to neutral and singly ionised atoms of a wide range of elements, including the highly refractory metals. New lifetime results are reported for some levels of Zr I and Zr II.
Hannaford, P., Lowe, R. M.
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The dynamics of ion expulsion in ultrashort pulse laser sputtering of Al2O3
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000Abstract The mechanism and dynamics of ion expulsion in near IR, ultrashort pulse laser sputtering, or ablation, of c-Al2O3 is studied using a combination of time-of-flight mass spectrometry and femtosecond laser pump-probe techniques. Coulomb explosion (CE) is identified as the dominant mechanism for ion expulsion under low fluence irradiation with ...
R. Stoian +5 more
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Launch and impact characteristics of typical multi-layered flyers driven by ns-pulsed laser
, 2019Laser-driven flyer technology not only has been widely applied in micro-scale material processing and dynamic high-pressure physics but also possesses obvious advantages in improving the instantaneity and safety of shock initiation.
Zhang Haonan +6 more
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Studies on SiC film deposited by pulsed XeCl excimer laser sputtering method
Physica B: Condensed Matter, 1996Abstract Thin films of SiC were grown by pulsed excimer laser deposition (PLD). The quality and structure of the films were examined by AES, XPS, TEM, SEM, XRD and IR. The deposited films were dense and uniform and stuck tightly to the substrates. The compositions of the films were quite uniform and the ratio of silicon to carbon atomic in the films ...
Yuxia Wang +4 more
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A new approach to thermal-spike sputtering with ions and laser pulses
Materials Science and Engineering: A, 1998The interactions of ion beams and laser pulses with solid or liquid surfaces have much in common, though different levels of importance. One recognizes processes which could be termed ballistic, thermal, electronic, and defect induced. These similarities have already been reviewed adequately so we propose here to concentrate only on thermal processes ...
R. Kelly, Miotello, Antonio
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