Results 151 to 160 of about 56,146 (240)

High-power performance enhancement in PZT-based piezoceramics via hot-pressing. [PDF]

open access: yesNat Commun
Cao WT   +15 more
europepmc   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

open access: yesAdvanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger   +8 more
wiley   +1 more source

TAPETE DE PZT [PDF]

open access: yes, 2019
Nicolas Henrique da Silva Santos   +1 more
openaire   +1 more source

Is There A Pure Electronic Ferroelectric?

open access: yesAdvanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
The search for faster, more reliable ferroelectric materials has shifted from traditional lattice‐driven ferroelectrics, which rely on slow ionic displacements, to electronic ferroelectrics, where polarization is governed by electronic ordering. This shift enables ultrafast switching, low‐field operation, and resistance to fatigue.
Xudong Wang   +8 more
wiley   +1 more source

Piezoelectric Origami Metamaterials for Enhanced Handwriting Recognition and Trajectory Tracking

open access: yesAdvanced Intelligent Discovery, Volume 2, Issue 1, February 2026.
This study introduces origami metamaterials inspired by Kresling piezoelectric generators to enhance biometric authentication and handwriting trajectory recognition. Overcoming sensor limitations in conventional devices, the design enables multichannel data acquisition with fewer sensors, utilizing machine learning to accurately identify content ...
Yinzhi Jin, Ting Tan, Zhimiao Yan
wiley   +1 more source

Measuring electric-acoustic heterodyning in piezoelectric materials. [PDF]

open access: yesCommun Phys
Karpisz T   +4 more
europepmc   +1 more source

New Insights of Ferroelectric Hf0.5Zr0.5O2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors

open access: yesAdvanced Physics Research, Volume 5, Issue 2, February 2026.
Ferroelectric HZO capacitors are investigated from room temperature down to 40 K using reversal polarization and synchrotron GIWAXS. Polar phases stabilize at low temperatures, while domain depinning enhances reversal polarization at higher temperatures.
Flavien Berthaud   +10 more
wiley   +1 more source

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