Results 171 to 180 of about 113,300 (325)

Shannon Entropy of Ramsey Graphs with up to Six Vertices. [PDF]

open access: yesEntropy (Basel), 2023
Frenkel M, Shoval S, Bormashenko E.
europepmc   +1 more source

Boosting Photo‐Pyroelectric Effect via Tunable Polarization and Interfacial Defect Engineering

open access: yesAdvanced Science, EarlyView.
This study reports Ba(Ti0.85Zr0.15)O3 nanocatalysts with enhanced polarization and oxygen‐vacancy‐rich interfaces for efficient NIR‐II photo‐pyroelectric therapy. Zr doping boosts the pyroelectric coefficient and accelerates polarization switching, while oxygen vacancies improve photothermal conversion and surface reactivity.
Yanli Huang   +13 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

open access: yesAdvanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo   +8 more
wiley   +1 more source

A Soft, Flexible Implant for Wireless Photothermal–Pyroelectric Neurostimulation

open access: yesAdvanced Science, EarlyView.
A replication strategy is used to enlarge the exposed surface area of barium titanate within flexible films with embedded carbon nanotubes, enabling efficient photothermal‐pyroelectric stimulation. Polar crystalline nanosheets show superior performance in guiding neural progenitor cells toward neuronal differentiation.
Jiang Wu   +7 more
wiley   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

open access: yesAdvanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim   +5 more
wiley   +1 more source

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