Results 221 to 230 of about 3,436,591 (356)

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

open access: yesAdvanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun   +9 more
wiley   +1 more source

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

open access: yesAdvanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen   +6 more
wiley   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

open access: yesAdvanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena   +10 more
wiley   +1 more source

High‐Rate Cross‐Channel Entanglement Swapping Between Independent On‐Chip Sources

open access: yesAdvanced Science, EarlyView.
To interconnect individual chip‐based quantum sources, high‐performance entanglement swapping is indispensable. Here, using low‐loss silicon chips with waveguide structure and frequency‐offset pumps, this work demonstrates high‐rate cross‐channel entanglement swapping.
Haoyang Wang   +5 more
wiley   +1 more source

Takens-Based Kernel Transfer Entropy Connectivity Network for Motor Imagery Classification. [PDF]

open access: yesSensors (Basel)
Gomez-Rivera A   +3 more
europepmc   +1 more source

Large Anomalous Hall Effect, Non‐Vanishing Berry Curvature in (110) FeRh Antiferromagnet Films via Interface Strain

open access: yesAdvanced Science, EarlyView.
This study demonstrates a strain‐tunable anomalous Hall response in the (110)‐oriented FeRh thin film. First‐principles calculations reveal that strain‐induced symmetry lowering redistributes Berry curvature near the Fermi level via band shifts and avoided crossings.
Yun‐Ho Kim   +11 more
wiley   +1 more source

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