Results 231 to 240 of about 1,802,873 (349)

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

open access: yesAdvanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun   +9 more
wiley   +1 more source

Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation

open access: yesAdvanced Science, EarlyView.
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen   +6 more
wiley   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

open access: yesAdvanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena   +10 more
wiley   +1 more source

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