Results 131 to 140 of about 161,154 (259)

Tunable Coordination Number in Non‐Metal‐Introduced Copper Catalysts Enables High‐Performance Electrochemical CO2 Reduction to C2 Products

open access: yesAdvanced Functional Materials, EarlyView.
Copper catalysts introduced with different non‐metallic elements regulating the coordination number of Cu are prepared by magnetron sputtering. Reducing the Cu coordination number enhances C─C coupling and boosts C2+ product selectivity, by lowering the energy barrier for the *CO → *CHO conversion step. The optimized Si‐doped Cu catalyst achieves a C2+
Xiaoye Du   +8 more
wiley   +1 more source

Automated Opportunistic Osteoporosis Screening in Routine Computed Tomography of the Spine: Comparison With Dedicated Quantitative CT [PDF]

open access: hybrid, 2020
Nico Sollmann   +10 more
openalex   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Quantitative computed tomography for assessing body composition in schizophrenia: a potential indicator of insulin resistance. [PDF]

open access: yesFront Psychiatry
Kuai X   +10 more
europepmc   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

open access: yesAdvanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed   +7 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

open access: yesAdvanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert   +15 more
wiley   +1 more source

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