Results 221 to 230 of about 3,047,990 (260)

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş   +6 more
wiley   +1 more source

Eco‐Friendly Laser‐Induced Graphene/Perovskite Hybrids for Eco‐Friendly Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
A sustainable paper‐based photodetector was developed by combining laser‐induced graphene (LIG) with MAPbI3 perovskite. Compared with pure LIG devices, the hybrid photodetector exhibited nearly 10‐fold higher responsivity and 7‐fold greater detectivity while maintaining stable performance after 1000 bending cycles, demonstrating its potential for ...
Ya‐Yun Huang   +3 more
wiley   +1 more source

Single-shot in situ readout of a spin qubit unit cell. [PDF]

open access: yesNat Electron
Hamonic P   +12 more
europepmc   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

open access: yesAdvanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou   +9 more
wiley   +1 more source

Gate‐Reconfigurable Single‐ and Double‐Dot Transport in Trilayer MoSe2

open access: yesAdvanced Electronic Materials, EarlyView.
Quantum dots are nanoscale islands that trap single electrons. In an atomically thin trilayer MoSe2 device, metallic finger gates sculpt the electronic landscape: tuning a single gate voltage smoothly merges two coupled quantum dots into one, and back.
Seungwoo Lee   +10 more
wiley   +1 more source

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