Results 191 to 200 of about 1,671,987 (325)
Efficient two‐photon resonant Raman scattering (TRRS) is observed in the layered perovskite (PEA)2PbI4, with the biexciton level acting as an intermediate state. TRRS undergoes two‐photon frequency shift upon input frequency tuning, persists up to 90 K, and shows clear threshold behavior and polarization selection rules.
Seung Han Shin +7 more
wiley +1 more source
A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen +16 more
wiley +1 more source
Properties of a subclass of starlike functions involving the quantum derivative operator. [PDF]
Breaz D +3 more
europepmc +1 more source
A 2D heterointerface with a two‐site anchor bridge suppresses nonradiative recombination at the perovskite/C₆₀ interface by reducing surface defects, elevating the Fermi level, and strengthening the electric field. This strategy enables efficient electron extraction, delivering 26.32% efficiency, 1.217 V Voc, excellent operational stability, and broad ...
Chaohui Li +27 more
wiley +1 more source
High‐Throughput Exfoliation of Optoelectronic‐Grade MoS2 via Turbulent‐Flow Wet Jet Milling
A scalable wet jet milling exfoliation method is demonstrated for producing optoelectronic‐grade MoS2 nanosheets using environmentally friendly ethyl cellulose in ethanol dispersion media. Guided by fluid dynamics modeling, this approach is optimized to achieve record‐high exfoliation throughput and concentration.
Maryam Khalaj +7 more
wiley +1 more source
On the Relativity of Quantumness as Implied by Relativity of Arithmetic and Probability. [PDF]
Czachor M.
europepmc +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Preface to the Special Issue: Quantum Probability and Randomness V. [PDF]
Khrennikov A, Svozil K.
europepmc +1 more source
Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source

