Results 231 to 240 of about 4,287,757 (400)
On Reliability Function of Quantum Communication Channel
M. V. Burnashev, A. S. Holevo
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This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner+9 more
wiley +1 more source
Individual scatterers as microscopic origin of equilibration between spin-polarized edge channels in the quantum Hall regime [PDF]
T. Heinzel+5 more
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Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du+11 more
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A spin group (SG)‐based mechanism is proposed to realize a single pair of Weyl points. PT‐symmetric nodal lines (NLs) persist under T‐breaking, protected by the combination of SG and P symmetry. When considering spin‐orbit coupling, the SG‐protected NL will split into Weyl points, which will also induce anomalous transport phenomena arising from ...
Shifeng Qian+6 more
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Quantum communication and the creation of maximally entangled pairs of atoms over a noisy channel
H. J. Briegel+4 more
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Low‐Loss Far‐Infrared Surface Phonon Polaritons in Suspended SrTiO3 Nanomembranes
The low‐loss, highly confined, and thickness‐tunable surface phonon polaritons are demonstrated in the far‐infrared regime within transferable freestanding SrTiO3 membranes, achieving high figures of merit comparable to the previous record values from the vdW materials.
Konnor Koons+8 more
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Teleportation as a Depolarizing Quantum Channel, Relative Entropy, and Classical Capacity [PDF]
Garry Bowen, Sougato Bose
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The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee+5 more
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