Results 241 to 250 of about 475,169 (310)

High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes

Advanced Materials Interfaces, EarlyView.
This paper demonstrates how Tip‐Enhanced Raman Spectroscopy (TERS) can detect diverse levels of strain in a SiGe‐Si structure in less than 20 nm of depth with lateral resolution under 100 nm. The measures are performed with a TiN‐coated probe, which secures a remarkable enhancement of the optical signal, while being chemically stable to allow TERS to ...
Chiara Mancini, Anacleto Proietti, Giancarlo La Penna, Luca Buccini, Daniele Passeri, Narciso Gambacorti, Marco Rossi   +6 more
wiley   +1 more source

Noiseless Quantum Circuits for the Peres Separability Criterion [PDF]

, 2005
Hilary A. Carteret
openalex   +1 more source

Self‐Organized Growth of Catalyst‐Free Single Crystal WnO3n‐2 (n = 25) Nanowire Bundles on Si (111) via Selective He+ Ion Irradiation

Advanced Materials Interfaces, EarlyView.
A novel and efficient method is explored to synthesize 1D single‐crystal sub‐stoichiometric WnO3n‐2 (n = 25) nanowire bundles. The approach utilizes selective low‐energy He+ ion irradiation (27 eV) on Mo‐Ni doped WOx surface, achieving efficient catalyst‐free self‐organized growth of high aspect ratio nanowires at the temperature of 700 °C.
Maryna Bilokur, Matt Thompson, Matthew Arnold, Cormac Corr   +3 more
wiley   +1 more source

Reversible addition circuit using one ancillary bit with application to quantum computing

, 2004
Phillip Kaye
openalex   +2 more sources

Investigating Dopant Effects in ZnO as an Electron Transport Layer for Enhanced Efficiency in Organic Photovoltaics

Advanced Materials Interfaces, EarlyView.
By doping the elements with different numbers of valence electrons (Al3+ and Sn4+ ions) into the ZnO matrix, device conversion efficiencies of 8.69% and 9.21%, respectively, are achieved. The ultrafast time‐resolved studies show that the elevated carrier concentration in Sn‐doped ZnO, in comparison with Al‐doped ZnO and un‐doped ZnO, plays a ...
Anusha Puliparambil Thilakan, Pei‐Lun Hung, Jin‐Bin Yang, Ding‐Lun Lin, Shien‐Der Tzeng, Yu‐Kuei Hsu, Chih‐Hung Tsai, Yi‐Hao Pai, Atshushi Yabushita, Chih‐Wei Luo, Mei‐Hsin Chen   +10 more
wiley   +1 more source

Quantum generative adversarial learning in a superconducting quantum circuit. [PDF]

Sci Adv, 2019
Hu L, Wu SH, Cai W, Ma Y, Mu X, Xu Y, Wang H, Song Y, Deng DL, Zou CL, Sun L.   +10 more
europepmc   +1 more source

Quantum boolean circuits construction using tabulation method [PDF]

, 2005
Chin-Yung Lu, Shiou-An Wang, Sy‐Yen Kuo   +2 more
openalex   +1 more source

Advancement in Colloidal Metasurfaces: Approaches for Scalable Photonic Devices

Advanced Materials Interfaces, EarlyView.
This perspective explores colloidal metasurfaces composed of plasmonic and emitting nanoparticles assembled by laser interference lithography and template‐assisted self‐assembly methods. Precise design strategies achieve directional emission, low‐threshold lasing, and tunable photonic bandgaps.
Sezer Seçkin, Swagato Sarkar, Tobias A.F. König   +2 more
wiley   +1 more source

Superconducting Circuits and Quantum Information [PDF]

, 2005
J. Q. You, Franco Nori
openalex   +1 more source

Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

Advanced Materials Interfaces, EarlyView.
Control the structure and polarity of epitaxial GaN on 4H‐SiC substrate with precise interfacial configuration. Ga‐polar wz‐GaN with Si‐HT configuration, N‐polar wz‐GaN with Si‐TM and C‐TH configurations, whereas non‐polar 4|8 GaN with C‐MT configuration resulting from the polarity competition of GaN nucleation, respectively.
Haidong Yuan, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, Jingjing Chang   +8 more
wiley   +1 more source