Results 211 to 220 of about 4,734,561 (380)

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan   +11 more
wiley   +1 more source

Quantum chaos border for quantum computing [PDF]

open access: green, 2000
Bertrand Georgeot, Dima L. Shepelyansky
openalex   +1 more source

Self‐organized Criticality in Neuromorphic Nanowire Networks With Tunable and Local Dynamics

open access: yesAdvanced Functional Materials, EarlyView.
Memristive nanowire networks (NWNs) are shown to be electrically tunable to a critical state where specific local dynamics evaluated by multiterminal characterization are exploited as feature selection in nonlinear transformation (NLT) tasks.
Fabio Michieletti   +3 more
wiley   +1 more source

Light‐Mediated Photomultiplication via Cascade Energy Transfer in Organic Photodiode

open access: yesAdvanced Functional Materials, EarlyView.
Light‐mediated photomultiplication via cascade energy transfer in organic photodiode demonstrates external quantum efficiency exceeding 200% and specific detectivity surpassing 5.0 × 1013 Jones. This advancement effectively addresses the limitation of elevated dark current density characteristic of prior photomultiplication organic photodetectors ...
Gae Hwang Lee   +8 more
wiley   +1 more source

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

open access: yesAdvanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu   +3 more
wiley   +1 more source

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