Results 111 to 120 of about 2,529,540 (368)
Frequency-Stabilized Source of Single Photons from a Solid-State Qubit
Physical Review X, 2013 Single quantum dots are solid-state emitters that mimic two-level atoms but with a highly enhanced spontaneous emission rate. A single quantum dot is the basis for a potentially excellent single-photon source.
Jonathan H. Prechtel +7 more
doaj +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel +6 more
wiley +1 more source
In Situ Growth of All‐Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer
Advanced Science, 2020 Directly growing perovskite single crystals on charge carrier transport layers will unravel a promising route for the development of emerging optoelectronic devices. Herein, in situ growth of high‐quality all‐inorganic perovskite (CsPbBr3) single crystal
Xiaobing Tang +17 more
doaj +1 more source
Phonon impact on optical control schemes of quantum dots: The role of quantum dot geometry and symmetry [PDF]
, 2017 Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped.
arxiv +1 more source
Advanced Functional Materials, EarlyView.This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel +2 more
wiley +1 more source
Electrostatic quantum dots in silicene
Scientific Reports, 2018 We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area.
B. Szafran +2 more
doaj +1 more source
Applied Sciences, 2020 We study the interaction of a quantum dot in the Voigt configuration with a laser pulse and particularly analyze the potential for rapid spin initialization by putting the quantum dot near a molybdenum disulfide (MoS 2 ) monolayer. The MoS 2
Dionisis Stefanatos +3 more
doaj +1 more source
Perspective: The future of quantum dot photonic integrated circuits
, 2018 Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration.
J. Norman, D. Jung, Y. Wan, J. Bowers
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao +17 more
wiley +1 more source
Theoretical issues in spin-based quantum dot quantum computation [PDF]
arXiv, 2001 We review our recent work addressing various theoretical issues in spin-based quantum dot quantum computation and quantum information processing. In particular, we summarize our calculation of electron exchange interaction in two-electron double quantum dots and multi-electron double dots, and discuss the physical implication of our results.
arxiv