Results 211 to 220 of about 2,219,213 (361)
A roll‐to‐roll exfoliation method is demonstrated that preserves the crystallographic alignment of anisotropic 2D materials over large areas, enabling scalable fabrication of directional electronic and optoelectronic devices. Abstract Anisotropic 2D materials such as black phosphorus (BP), GeS or CrSBr, exhibit direction‐dependent optical and ...
Esteban Zamora‐Amo +14 more
wiley +1 more source
Reversible Tuning of Nanowire Quantum Dot to Atomic Transitions. [PDF]
Al Maruf R +12 more
europepmc +1 more source
Exact Diagonalization Study of Double Quantum Dot System in Zero-bandwidth Limit
Haroon, M. A. H. Ahsan
openalex +2 more sources
Towards quantum-dot arrays of entangled photon emitters [PDF]
G. Juška +4 more
openalex +1 more source
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou +8 more
wiley +1 more source
Hole migration enables efficient and ultra-bright green quantum dot LEDs. [PDF]
Zhang H +8 more
europepmc +1 more source
In situ monitoring of bulk photoalignment reveals how molecular weight, azobenzene content, cooling rate, and thickness govern ordering in main‐chain liquid crystalline polymers. Optimized copolymers exceed conventional thickness limits, maintaining stable alignment up to 130 µm with high energy efficiency and reversible optical patterning.
Jaechul Ju +3 more
wiley +1 more source
Storing quantum coherence in a quantum dot nuclear spin ensemble for over 100 milliseconds. [PDF]
Dyte HE +4 more
europepmc +1 more source
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon +9 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source

