Results 81 to 90 of about 2,529,540 (368)

Quantum communication with quantum dot spins [PDF]

open access: yesPhysical Review B, 2007
4 pages, 2 figures, new and improved version, explicit performance ...
Christoph Simon   +5 more
openaire   +2 more sources

Stabilized Intermediate Phase Via Pseudo‐Halide Anions Toward Highly Efficient and Light‐Soaking Stable Perovskite Solar Cells

open access: yesAdvanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
The formate pseudo‐halide anion is strategically introduced at the buried interface to stabilize the intermediate phases formed during perovskite crystallization. The controlled crystallization enhances crystallinity and alleviates tensile strain, eliminating residual PbI2 near the buried interface.
Jongdeuk Seo   +12 more
wiley   +1 more source

Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array [PDF]

open access: yesNature, 2017
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter.
T. Hensgens   +8 more
semanticscholar   +1 more source

Removing Homocoupling Defects in Alkoxy/Alkyl‐PBTTT Enhances Polymer:Fullerene Co‐Crystal Formation and Stability

open access: yesAdvanced Functional Materials, EarlyView.
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu   +14 more
wiley   +1 more source

ENERGY LEVEL DETERMINATION AND PERFORMANCE ANALYSIS OF QUANTUM DOT PHOTO DETECTOR [PDF]

open access: yesICTACT Journal on Communication Technology, 2013
The theoretical estimation of dark and illumination characteristics of InGaAs quantum dot photo detector is developed and presented in this paper. The exact potential and energy profile of the Quantum Dot is computed by obtaining the solution of 3D ...
M. Madheswaran, K.R. Kavitha
doaj  

Single to quadruple quantum dots with tunable tunnel couplings [PDF]

open access: yesAppl. Phys. Lett. 104, 113109 (2014), 2014
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry.
arxiv   +1 more source

Flexible quantum dot light-emitting diodes for next-generation displays

open access: yesnpj Flexible Electronics, 2018
In the future electronics, all device components will be connected wirelessly to displays that serve as information input and/or output ports. There is a growing demand of flexible and wearable displays, therefore, for information input/output of the ...
M. Choi   +3 more
semanticscholar   +1 more source

Quantum dot single-photon sources with ultra-low multi-photon probability [PDF]

open access: yesnpj Quantum Information, 2018
High-quality sources of single photons are of paramount importance for quantum communication, sensing, and metrology. To these ends, resonantly excited two-level systems based on self-assembled quantum dots have recently generated widespread interest ...
L. Hanschke   +9 more
semanticscholar   +1 more source

Exploring Dipolar Dynamics and Ionic Transport in Metal‐Organic Frameworks: Experimental and Theoretical Insights

open access: yesAdvanced Functional Materials, EarlyView.
In this study, the interplay of dipolar dynamics and ionic charge transport in MOF compounds is investigated. Synthesizing the novel structure CFA‐25 with integrated freely rotating dipolar groups, local and macroscopic effects, including interactions with Cs cations are explored.
Ralph Freund   +6 more
wiley   +1 more source

Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers

open access: yesE3S Web of Conferences, 2017
In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth.
Kim Dongyoung   +8 more
doaj   +1 more source

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