Results 111 to 120 of about 35,825 (292)
Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K +7 more
wiley +1 more source
Anchoring quantum dots (QDs) onto thermodynamically stable, large band gap oxide semiconductors is a very important strategy to enhance their quantum yields for solar energy conversion in both visible and near-IR regions. We describe a general procedure for anchoring a few chalcogenide QDs onto the titanium oxide layer. To anchor the colloidal QDs onto
Lee, HJ +5 more
openaire +3 more sources
To overcome limitations of conventional AI hardware, a light‐voltage dual‐modulating synaptic (LVDS) transistor using an IGZO/InAs quantum dot hybrid structure is proposed. LVDS transistor enables analog summation for Dueling Deep Q‐Networks by independently modulating memory via optical and electrical stimuli.
Dong Gue Roe +10 more
wiley +1 more source
We demonstrate a novel ultra-broadband tunable InAs/InP quantum dot (QD) external-cavity laser incorporating a chirped multilayer QD active region.
Hengbo Sun, Lijun Hao, Yong Zhao
doaj +1 more source
A solvent‐free, open‐mill shear protocol nucleates 2.6 nm CsPbBr3 QDs uniformly within brominated butyl rubber. The emitters showed 91% PLQY, 1189 ns lifetime, and > 90% retention after 30‐day ambient storage and water immersion, respectively. Board‐to‐board forms 17 × 17 cm2 flexible films for 132% NTSC white LEDs, scintillators, and stretchable ...
Yuxian Su +6 more
wiley +1 more source
Lead chalcogenide quantum dot (QD) photodetectors have attracted considerable attention due to their high specific detectivity, process compatibility on Si circuitry enabling monolithic integration, adjustable bandgap in short-wavelength infrared (SWIR ...
Junyoung Jin +6 more
doaj +1 more source
We represent an optical scheme using cross-Kerr nonlinearities (XKNLs) and quantum dot (QD) within a single-sided optical cavity (QD-cavity system) to generate three-photon entangled W state containing entanglement against loss of one photon of them.
Jino Heo +3 more
doaj +1 more source
Quantum Dots (QD-Dye Conjugate) are Ideal Candidates for FRET Investigations Using TIRMicroscopy [PDF]
Asma Hadi Mohammed
openalex +1 more source
A spin‐corner‐layer coupling mechanism is proposed in 2D altermagnetic bilayers. Exemplified by NiZrI6, the spin, layer, and topological corner states are simultaneously controlled by an ultralow electric field, enabling active modulation of terahertz absorption, emission, and polarization.
Jianhua Wang +6 more
wiley +1 more source
Quantum dot light-emitting diodes (QLEDs) hold great promise for next-generation display applications owing to their exceptional optical properties and versatile tunability.
Ahmet F. Yazici +8 more
doaj +1 more source

