Results 31 to 40 of about 8,462 (239)

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies   +2 more
wiley   +1 more source

Sb2S3 Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

open access: yesInternational Journal of Photoenergy, 2015
We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode.
You-Da Hsieh, Ming-Way Lee, Gou-Jen Wang
doaj   +1 more source

Inkjet-Printed Patterned Quantum Dots Film for High-Efficiency Displays

open access: yesIEEE Photonics Journal, 2022
Due to the effect of solution kinetics and crystallization kinetics of quantum dot (QD) during inkjet printing, the inkjet printing technique is prone to form coffee-ring patterns and in-homogenous films.
Pengsen Lin   +3 more
doaj   +1 more source

Proteomic Analysis Identifies Markers of Exposure to Cadmium Sulphide Quantum Dots (CdS QDs) [PDF]

open access: yesNanomaterials, 2020
The use of cadmium sulphide quantum dot (CdS QD)-enabled products has become increasingly widespread. The prospect of their release in the environment is raising concerns. Here we have used the yeast model Saccharomyces cerevisiae to determine the potential impact of CdS QD nanoparticles on living organisms. Proteomic analyses and cell viability assays
Valentina Gallo   +6 more
openaire   +5 more sources

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma   +10 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long   +26 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

open access: yesAdvanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission

open access: yesIEEE Photonics Journal
We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm GaAs spacer ...
Pawan Mishra   +13 more
doaj   +1 more source

Thermal circuit model for silicon quantum-dot array structures [PDF]

open access: yesAPL Quantum
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise.
Takeru Utsugi   +9 more
doaj   +1 more source

Home - About - Disclaimer - Privacy