Results 111 to 120 of about 177,744 (299)

O-band InAs/GaAs quantum-dot microcavity laser on Si (001) hollow substrate by in-situ hybrid epitaxy

open access: yesAIP Advances, 2019
Recent years, the emergence of hyper-scale data centers boosted the research field of integrated silicon photonics. One of the major challenges for compact photonic integrated circuits is silicon based lasers.
Bin Zhang   +10 more
doaj   +1 more source

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL [PDF]

open access: yesJournal of Optoelectronical Nanostructures, 2018
The frequency behavior of the tunnel injection quantum dot vertical cavitysurface emitting laser (TIQD-VCSEL) is investigated by using an analyticalnumericalmethod on the modulation transfer function.
Mehdi Riahinasab, Elham Darabi
doaj  

Kondo effect in complex mesoscopic structures

open access: yes, 2004
We study the Kondo effect of a quantum dot placed in a complex mesoscopic structure. Assuming that electronic interactions are taking place solely on the dot, and focusing on the infinite Hubbard interaction limit, we use a decoupling scheme to obtain an
A. Aharony   +5 more
core   +1 more source

Magnetic Force Microscopy Signatures of Higher‐Order Skyrmions and Antiskyrmions

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic force microscopy operated under vacuum conditions enables the qualitative identification of higher‐order skyrmions and antiskyrmions in Co/Ni multilayers at room temperature. Distinct stray‐field contrast signatures arise from vertical Bloch lines and complex domain‐wall configurations.
Sabri Koraltan   +8 more
wiley   +1 more source

Localised recombination in quantum dot structures

open access: yes2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006
The measured non-radiative current varies linearly with ground state radiative current for InAs dots, in agreement with calculations for localised recombination using a radiative lifetime deduced from absorption data, and non-radiative lifetime of 0.8 ns.
Ian C. Sandall   +6 more
openaire   +2 more sources

Stacking‐Engineered Magnonic Topology and Transport in Honeycomb Homobilayers

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Topological magnons have emerged as a promising platform for dissipationless bosonic transport. However, a straightforward and effective strategy to engineer such topological states in real materials has yet to be fully realized. Here, a general scheme for controlling magnonic topological states via stacking engineering in van der Waals ...
Xiaoran Feng   +6 more
wiley   +1 more source

Machine learning enhanced evaluation of semiconductor quantum dots

open access: yesScientific Reports
A key challenge in quantum photonics today is the efficient and on-demand generation of high-quality single photons and entangled photon pairs. In this regard, one of the most promising types of emitters are semiconductor quantum dots, fluorescent ...
Emilio Corcione   +11 more
doaj   +1 more source

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

open access: yesAdvanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles   +16 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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