Results 221 to 230 of about 26,906 (267)
Some of the next articles are maybe not open access.
The Peculiar Electronic Structure of PbSe Quantum Dots
Nano Letters, 2006PbSe is a pseudo-II-VI material distinguished from ordinary II-VI's (e.g., CdSe, ZnSe) by having both its valence band maximum (VBM) and its conduction band minimum (CBM) located at the fourfold-degenerate L-point in the Brillouin zone. It turns out that this feature dramatically affects the properties of the nanosystem.
J M, An +3 more
openaire +2 more sources
Fabrication and Characterization of a Double Quantum Dot Structure
Journal of Nanoscience and Nanotechnology, 2008We report the fabrication and characterization of a new type of double quantum dot (QD) structure. We utilize standard CMOS processing steps without any modification to fabricate the double QD. We form three CMOS poly-Si gates with oxide sidewall spacers in series on a silicon-on-insulator nanowire.
YoungChai, Jung +7 more
openaire +2 more sources
Hot-electron bistability in quantum-dot structures
Physical Review B, 1993We present a theoretical analysis of hot-electron bistability in quantum-dot structures. An energy balance approach is used to demonstrate the existence of negative differential conductance due to thermal runaway of the carriers in the dot structure.
, Goodnick, , Wu, , Wybourne, , Smith
openaire +2 more sources
Effects of band structure and spin in quantum dots
Physical Review B, 1993Band structure and spin can modify the simple two-mode far-infrared spectra of quantum dots. In our investigation of these effects we start from a k\ensuremath{\cdot}p Hamiltonian for the conduction, valence, and spin-orbit split-off bands, with potentials for subband formation and harmonic lateral confinement.
, Darnhofer, , Rössler
openaire +2 more sources
Photoluminescence enhancement of quantum dots with photonic structures
Microelectronics Journal, 2009Photoluminescence (PL) of CdSe/ZnS quantum dots (QDs) deposited on Si and photonic crystals with packed silica spheres, are investigated with the purpose of establishing enhancement of PL. Quantum dots with size ~2.4nm are introduced into the solution containing silica spheres of ~345nm size.
Ke Liu 0011, Raphael Tsu
openaire +2 more sources
Formation of ZnS Cubes and Quantum Dots and Structural Feature for Improved Quantum Dot Emission
LangmuirZinc blende-phased zinc sulfide cubes with tunable sizes of 200-370 nm have been synthesized together with an extensive growth of 5-10 nm ZnS quantum nanostructures. Their band gaps red-shift slightly with increasing cube sizes. Lattice imperfection is commonly observed in quantum dots, but its relation to emission intensity is less explored.
Satyaranjan Jena +2 more
openaire +2 more sources
Coupled quantum dot–ring structures by droplet epitaxy
Nanotechnology, 2011The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface.
SOMASCHINI, CLAUDIO +3 more
openaire +3 more sources
Bound polarons in quantum dot quantum well structures
Chinese Physics B, 2009The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the dielectric continuum approximation.
Xing Yan, Wang Zhi-Ping, Wang Xu
openaire +1 more source
Kondo transport through a quantum dot coupled with side quantum-dot structures
Chinese Physics B, 2010This paper investigates Kondo transport properties in a quadruple quantum dot (QD) based on the slave-boson mean field theory and the non-equilibrium Green's function. In the quadruple QD structure one Kondo-type QD sandwiched between two leads is side coupled to two separate QD structures: a single-QD atom and a double-QD molecule.
openaire +1 more source